March 5, 2021 – Weebit Nano Limited (ASX: WBT), a leading developer of next generation memory technologies for the global semiconductor industry, is pleased to announce that it has filed two new patents to further protect the intellectual property of its silicon oxide (SiOx) ReRAM technology. These new patents describe significant improvements to the programming of ReRAM, further extending some of the already-known advantages of Weebit’s ReRAM technology.
The programming of non-volatile memories (NVM) had continuously been a challenge, resulting in prolonged access times, high power consumption and reduced endurance. Weebit’s ReRAM technology tackled these drawbacks by supporting a simple programming method, requiring sophisticated analog circuits. With the recently filed patents, applicable to a wide variety of ReRAM technologies, Weebit paves the way to even more efficient programming methods, which enhance these advantages by up to a factor of two while increasing memory endurance.
The first patent describes unique chip circuitries that operate in tandem to optimise the access time and power associated with programming the memory module, while enhancing bit performance. The second patent, also deeply embedded in the chip circuitry, expands the concurrency of ReRAM programming beyond what emerging NVMs support today, resulting in doubling memory access speed.
Coby Hanoch, CEO of Weebit Nano, said: “We are proud to continue leading the innovation trend in the ReRAM ecosystem. As we make progress towards taping out our first ReRAM memory module, planned for the middle of this year, we are further enhancing our intellectual property with unique design-related patents. These patents are game changers for some applications, supporting Weebit’s focused efforts towards achieving a first commercial agreement.”
About Weebit Nano Limited
Weebit Nano is a leader in the development of next generation computer memory technology and plans to become the new industry standard in this space. Its goal is to address the growing need for a significantly higher performance and lower power computer memory technology. Weebit Nano’s ReRAM technology is based on fab-friendly Silicon Oxide, allowing the company to rapidly execute, without the need for special equipment or preparations. The company secured several patents to ensure optimal commercial and legal protection for its ground-breaking technology.
Weebit Nano’s technology enables a quantum leap, allowing semiconductor memory elements to be significantly cheaper, faster, more reliable and more energy efficient than the existing Flash technology. Weebit Nano has signed an R&D agreement with Leti, an R&D institute that specialises in nanotechnologies, to further develop SiOx ReRAM technology.
For more information please visit: http://www.weebit-nano.com