SUNNYVALE, Calif. and MILPITAS, Calif., May 12, 2003 - MoSys, Inc. (NASDAQ: MOSY), the industry's leading provider of high density SoC embedded memory solutions and LSI Logic, Corp. (NYSE:LSI), a leading designer and manufacturer of communications, consumer and storage semiconductors, announced today that LSI Logic has started to manufacture integrated circuits for DVD applications utilizing MoSys' high density 1T-SRAM*embedded memory technology.
"MoSys' 1T-SRAM embedded memory technology provides advantages in performance and density over other available technologies," said Timothy Vehling, senior director of marketing for consumer products, LSI Logic's Broadband Entertainment Division. "We will continue to deliver the advanced, cost-effective solutions required by our customers in these competitive consumer markets."
LSI Logic is an industry leader in the development and delivery of highly integrated silicon and systems solutions. LSI Logic's Broadband Entertainment Division provides innovative digital media processing and silicon solutions to industry-leading, worldwide consumer electronics manufacturers. With a complete line of cutting-edge products for DVD, DVR, video peripheral, digital and HDTV, set-top box and professional video editing/ broadcasting devices, LSI Logic delivers entertainment into and throughout the digital home.
"MoSys is pleased to have reached this milestone in our relationship with LSI Logic," said Mark-Eric Jones, vice president and general manager of Intellectual Property at MoSys. "Our 1T-SRAM embedded memory technology continues to prove itself beneficial for cost-sensitive consumer product designs."
ABOUT LSI LOGIC
LSI Logic Corporation is a leading designer and manufacturer of communications, consumer and storage semiconductors for applications that access, interconnect and store data, voice and video. In addition, the company supplies storage network solutions for the enterprise. LSI Logic is headquartered at 1621 Barber Lane, Milpitas, CA 95035. http://www.lsilogic.com .
ABOUT MOSYS & 1T-SRAM
Founded in 1991, MoSys (NASDAQ: MOSY), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, 1T-SRAM technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making it ideal for embedding large memories in System on Chip (SoC) designs. MoSys' licensees have shipped more than 50 million chips incorporating 1T-SRAM embedded memory technologies, demonstrating excellent manufacturability in a wide range of silicon processes and applications. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys' website at http://www.mosys.com .
Note for Editors:
1T-SRAM® is a MoSys trademark registered in the U.S. Patent and Trademark Office. All other trade, product, or service names referenced in this release may be trademarks or registered trademarks of their respective holders.