SUNNYVALE, Calif. & SHANGHAI, China--(BUSINESS WIRE)--May 19, 2003--MoSys, Inc. (Nasdaq:MOSY) the industry's leading provider of high density SoC embedded memory solutions and Semiconductor Manufacturing International Corporation (SMIC), China's first advanced open-IC foundry, have announced the silicon verification of MoSys' 1T-SRAM(R) memory technology on SMIC's 0.18-micron standard logic process.
With this manufacturing milestone completed, SMIC's customers can confidently select MoSys' 1T-SRAM technology to meet the memory requirements of their System-on-Chip (SoC) designs.
"SMIC's silicon verification of MoSys' 1T-SRAM memory gives our customers access to an embedded memory technology that passes the test of successful manufacturing. This reduces design risk and enhances the ability to create complex SoC designs," stated James Sung, vice president of Sales and Marketing at SMIC. "Our cooperation with MoSys provides our customers with a seamless path from design to manufacturing, and enables creation of system-level devices using MoSys' unique, high density memory architecture."
"MoSys' 1T-SRAM embedded memory technology lets SMIC's customers achieve system-level integration with increased memory density and logic on the same chip," commented Mark-Eric Jones, vice president and general manager of Intellectual Property at MoSys, Inc. "We look forward to working with SMIC, its customers and partners."
SMIC is the first pure-play advanced IC foundry in China to achieve volume production of 8-inch wafers at 0.25-micron, 0.18-micron and finer-line technologies. Established in April 2000, SMIC is a Cayman Islands company based in Shanghai. The foundry provides customers with a full range of services that include: design services, mask manufacturing, wafer fabrication as well as testing capabilities. For more information please visit www.smics.com.
About MoSys and 1T-SRAM
Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs, while using the same standard logic manufacturing processes.
1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making it ideal for embedding large memories in System on Chip (SoC) designs. MoSys' licensees have shipped more than 50 million chips incorporating 1T-SRAM embedded memory, demonstrating the excellent manufacturability of the technology in a wide range of silicon processes and applications. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys' Web site at http://www.mosys.com.
1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and Trademark Office. All other trade, product, or service names referenced in this release may be trademarks or registered trademarks of their respective holders.