SUNNYVALE, Calif., Jul 7, 2003 (BUSINESS WIRE) -- MoSys, Inc. (Nasdaq:MOSY) has been named as the fastest growing Top 10 semiconductor Intellectual Property (IP) vendor by IP revenue, according to a report by leading independent market research company, Gartner Dataquest. The survey, conducted by Jim Tully, a chief analyst at Gartner Dataquest, notes that MoSys' revenues from semiconductor IP leapt from $9.5 million in 2001 to $24.9M in 2002, representing a growth of 162%, more than five times the industry average. The 2002 position builds on an equally strong showing in a similar survey last year, when MoSys was ranked fastest growing Top 20 semiconductor IP company.
MoSys also ranked highly in growth of royalties derived from semiconductor IP, rising from $3.4 million in 2001 to $14.4M in 2002, placing it in the top four IP vendors worldwide by royalty revenue. These royalties represented 58 percent of MoSys' revenues from IP, more than double than the industry average of 21 percent.
The 2002 Gartner Dataquest report shows that memory is the fastest growing revenue generator by function, and MoSys is the only specialist memory IP supplier to be noted by Tully as among the "leaders that made a strong contribution in 2002."
"We're very satisfied with our worldwide number one ranking in IP revenue growth," said Mark-Eric Jones, vice president and general manager of intellectual property for MoSys, "and we're particularly pleased that we have achieved such impressive growth figures for the second year running. In particular, it is very encouraging that we have maintained our momentum in royalty growth. This shows the increasing adoption of our technology for volume production by our customers - our most recent success is in production in a latest-generation cell phone in Asia - and the continuing value that our customers receive. It's good to see that Gartner Dataquest concurs on the importance of royalties: the recommendation Jim Tully makes on page one of the report comments: 'Vendors must develop business models that will build royalty revenue for the benefit of vendors and users.' At MoSys, we have been following such a model since starting our IP business."
ABOUT MOSYS AND 1T-SRAM
Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs, while using the same standard logic manufacturing processes.
1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making it ideal for embedding large memories in System on Chip (SoC) designs. MoSys' licensees have shipped more than 50 million chips incorporating 1T-SRAM embedded memory, demonstrating the excellent manufacturability of the technology in a wide range of silicon processes and applications. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys' Web site at http://www.mosys.com.
1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and Trademark Office. All other trade, product, or service names referenced in this release may be trademarks or registered trademarks of their respective holders.
"Safe Harbor" Statement under the Private Securities Litigation Reform Act of 1995: Statements in this press release regarding MoSys, Inc.'s business which are not historical facts are "forward-looking statements" that involve risks and uncertainties. For a discussion of such risks and uncertainties, which could cause actual results to differ from those contained in the forward-looking statements, see "Risk Factors" in the Company's Annual Report or Form 10-K for the most recently ended fiscal year.