Embedded Memory IP Keeps Die Size Small; Cuts Costs SUNNYVALE, Calif., August 4, 2003
– MoSys, Inc. (NASDAQ: MOSY) the industry's leading provider of high density SoC embedded memory solutions, and eSilicon Corporation, the first fabless custom chip company to bring all aspects of the design and manufacturing process together in a single, unified environment, today announced that eSilicon Corporation is successfully using 1T-SRAM technology in a new advanced networking chip, resulting in significant die size reduction and cost benefits.
eSilicon chose MoSys’ 1T-SRAM embedded memory technology for this networking project because it combines area-efficiency with improved performance and yield in a technology that is production proven and cost-effective. This combination of benefits is not available from other memory technologies.
“MoSys’ 1T-SRAM embedded memory technology delivers significant advantages in performance and density over other available technologies that we investigated,” commented Mike Gianfagna, vice president of Marketing for eSilicon. “A clear trend, noted by independent industry analysts, is that memory is occupying an increasing percentage of the die area in any SoC. In this design, 2-Mbit of SRAM accounts for a significant portion of the die size.”
“We are delighted that eSilicon has successfully delivered working silicon to its customer using our technology, joining the ever-expanding list of companies choosing MoSys’1T-SRAM embedded memories,” said Mark-Eric Jones, vice president and general manager of Intellectual Property at MoSys. “As the proportion of SoC die area occupied by memory continues to grow, the dual benefits of increased density and yield inherent in our 1T-SRAM technology combine to deliver dramatic advantages for the whole SoC design, and consequently, for eSilicon's customers.”
The advanced networking chip is the first design eSilicon and MoSys have partnered on and the results have met or exceeded all targeted specifications. eSilicon is a member of MoSys’ Design Services Alliance and has additional chips utilizing 1T-SRAM memory technology in its manufacturing pipeline.ABOUT eSILICON
eSilicon Corporation is a full-service provider of custom chips to the world's leading electronics companies. Founded in 2000, the company's unique approach manages every step of the IC development process - from specification through manufacturing and delivery of packaged and tested parts. eSilicon offers value-added design and manufacturing expertise, with an ebusiness infrastructure that provides significant visibility, predictability and time-to-market advantages. Headquartered in Sunnyvale, CA with offices in Allentown, PA, and Murray Hill, NJ, eSilicon has approximately 80 employees. For more information about eSilicon, visit www.eSilicon.com
. ABOUT MOSYS
Founded in 1991, MoSys (NASDAQ: MOSY), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs, while using the same standard logic manufacturing processes.1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making it ideal for embedding large memories in System on Chip (SoC) designs. MoSys’ licensees have shipped more than 50 million chips incorporating 1T-SRAM embedded memory, demonstrating the excellent manufacturability of the technology in a wide range of silicon processes and applications. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys' website at http://www.mosys.com
Note for Editors:
1T-SRAM® is a MoSys trademark registered in the U.S. Patent and Trademark Office. All other trade, product, or service names referenced in this release may be trademarks or registered trademarks of their respective holders.