MoSys joins Chartered's NanoAccess Alliance; Silicon validation of 1T-SRAM by Q1 2004
MILPITAS and SUNNYVALE, Calif. - September 18, 2003 - Chartered Semiconductor Manufacturing (Nasdaq: CHRT and SGX-ST: Chartered), one of the world's top three dedicated semiconductor foundries, and MoSys, Inc. (Nasdaq:MOSY), the industry's leading provider of high density system-on-chip (SoC) embedded memory solutions, today announced they are porting MoSys' innovative 1T-SRAMÒ - RÔ technology to Chartered's NanoAccessÔ 90-nanometer (nm) semiconductor manufacturing process. MoSys has joined Chartered's NanoAccess Alliance solidifying the companies' ongoing collaboration, which includes validation of a 90nm test chip containing the 1T-SRAM memory technology in October 2003. Complete silicon characterization is scheduled for the first quarter of 2004.
"Our commitment to support Chartered's NanoAccess 90nm technologies extends MoSys' existing offering of high-density memory for Chartered's manufacturing processes, which currently includes silicon-validated 0.18-micron through 0.13-micron components," said Mark-Eric Jones, vice president and general manager of Intellectual Property for MoSys. "With access to our embedded memory across multiple process nodes, companies can leverage familiar, proven intellectual property building blocks to maintain consistency and reduce risk during design and manufacturing as they move to 90nm technologies for their next-generation products."
"Chip companies are moving to leading-edge process technologies for performance reasons, and this in turn drives the need for more memory to drive complex system functions. This is proving true at 0.13 micron and becomes imperative for chips at 90nm and beyond," said Kevin Meyer, vice president of worldwide marketing and services at Chartered. "High-density embedded memory solutions such as MoSys' 1T-SRAM technology enable our mutual customers to cost-effectively support more system functionality in silicon."
MoSys is an inaugural member of Chartered's NanoAccess Alliance, and joins the extensive ecosystem of industry-leading library, electronic design automation, intellectual property, and outsourced design and manufacturing services companies. The NanoAccess Alliance brings together critical system-on-chip technologies and services with Chartered's NanoAccess semiconductor manufacturing processes for 90nm and beyond. Chartered and the NanoAccess Alliance companies promote access to open design solutions that allow foundry customers more control over their leading-edge design and manufacturing options. (See September 18, 2003 press release, "Chartered Launches NanoAccess Alliance to Enable Chip Design on Foundry-Proven 90nm Process Platform")
Mosys' patented semiconductor 1T-SRAM memory technology offers a combination of high density, low power consumption, high speed and low cost. It provides significant advantages over traditional SRAM in density, power consumption and cost that enable designers to more economically use a larger amount of memory. Instead of six transistors utilized in a traditional SRAM storage cell, each 1T-SRAM storage cell contains only one transistor and one capacitor, thus reducing the silicon required and lowering cost.
Chartered Semiconductor Manufacturing, one of the world's top three dedicated semiconductor foundries, is forging a customized approach to outsourced semiconductor manufacturing by building lasting and collaborative partnerships with its customers. The Company provides flexible and cost-effective manufacturing solutions for customers, enabling the convergence of communications, computing and consumer markets. In Singapore, Chartered operates five fabrication facilities and has a sixth fab, which will be developed as a 300mm facility.
A company with both global presence and perspective, Chartered is traded on both the Nasdaq Stock Market (Nasdaq: CHRT) and on the Singapore Exchange (SGX-ST: CHARTERED). Chartered's 3,500 employees are based at 11 locations around the world. Information about Chartered can be found at www.charteredsemi.com.
Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs, while using the same standard logic manufacturing processes.
1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making it ideal for embedding large memories in System on Chip (SoC) designs. MoSys' licensees have shipped more than 50 million chips incorporating 1T-SRAM embedded memory, demonstrating the excellent manufacturability of the technology in a wide range of silicon processes and applications. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys' website at http://www.mosys.com.
Chartered Safe Harbour Statement under the provisions of the United States Private Securities Litigation Reform Act of 1995
This news release may contain forward-looking statements, as defined in the safe harbor provisions of the U.S. Private Securities Litigation Reform Act of 1995. These forward-looking statements are subject to certain risks and uncertainties, which could cause actual results to differ materially. Among the factors that could cause actual results to differ materially are : the difficulties, interruptions and unforeseen delays in the progress and implementation of our collaborative efforts with MoSys; changes in market outlook and trends; customer demands; rate of semiconductor market recovery; economic conditions in the United States as well as globally; the performance level of and technology mix in our fabrication facilities and competition. Although we believe the expectations reflected in such forward-looking statements are based upon reasonable assumptions, we can give no assurance that our expectations will be attained. In addition to the foregoing factors, a description of certain other risks and uncertainties which could cause actual results to differ materially can be found in the section captioned "Risk Factors" in our Annual Report on Form 20-F and our First Quarter 2003 Quarterly Report on Form 6-K filed with the U.S. Securities and Exchange Commission. You are cautioned not to place undue reliance on these forward-looking statements, which are based on the current view of management on future events. We undertake no obligation to publicly update or revise any forward-looking statements, whether as a result of new information, future events or otherwise.
NanoAccess is a trademark of Chartered Semiconductor Manufacturing. All other trademarks are the property of their respective owners.