SUNNYVALE, Calif., and SINGAPORE, November 3, 2003
– MoSys, Inc. (NASDAQ: MOSY) the industry’s leading provider of high density system-on-chip (SoC) embedded memory solutions, and Chartered Semiconductor Manufacturing (NASDAQ: CHRT and SGX-ST: CHARTERED), one of the world’s top three dedicated semiconductor foundries, today announced an agreement to qualify and offer MoSys’ innovative quad density 1T-SRAM-Q technology on Chartered’s 0.13-micron process. This agreement extends the existing collaboration between the companies to offer additional optimized high-density memory solutions on multiple technology generations and products.
MoSys and Chartered have already successfully qualified MoSys’ 1T-SRAM high-density memory solution on Chartered’s 0.18-micron and 0.13-micron process technologies, and are in the process of qualifying the 1T-SRAM technology on Chartered’s NanoAccessÔ 90nm SoC manufacturing technologies. MoSys is a member of Chartered’s NanoAccess Alliance aimed at accelerating development and reducing the risk of nanometer-scale integrated circuits (ICs) and SoC devices for fabless and fab-lite chip companies.
“We are pleased to extend our partnership with Chartered for the support of our advanced 1T-SRAM-Q technology,” noted Mark-Eric Jones, vice president and general manager of Intellectual Property at MoSys. “This addition broadens the range of options for Chartered’s foundry customers requiring integration from one to hundreds of megabits of high-performance SRAM in their SoCs.”
“The memory requirements of customers are increasing over time and with each technology node. By offering MoSys’ high-density embedded memory technologies as a complement to Chartered’s proven 0.13-micron platform, customers have greater flexibility and a predictable path for implementing their SoCs,” said Kevin Meyer, vice president of worldwide marketing and services at Chartered. “Our ongoing efforts with MoSys to qualify their 1T-SRAM-Q technology is a reflection of our desire to provide access to advanced solutions for our mutual customer base.” ABOUT 1T-SRAM-Q
1T-SRAM-Q technology is the latest offering from MoSys as part of its embedded memory solutions. 1T-SRAM-Q achieves its exceptional density by using bit cells of just 0.50 micron2 in the 0.13-micron logic process. Using only one additional, non-critical mask on the standard logic process, 1T-SRAM-Q enables cost-effective integration of large amounts of embedded memory on SoC designs without any change to the other logic IP blocks or libraries. 1T-SRAM-Q incorporates MoSys’ proprietary Transparent Error CorrectionTM (TECTM ) technology delivering the additional benefits of improved yield and reliability with elimination of laser repair and soft error concerns.ABOUT MOSYS
Founded in 1991, MoSys (NASDAQ: MOSY), develops, licenses and markets innovative memory technologies for semiconductors. MoSys’ patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs, while using the same standard logic manufacturing processes.1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making it ideal for embedding large memories in System on Chip (SoC) designs. MoSys’ licensees have shipped more than 50 million chips incorporating 1T-SRAM embedded memory, demonstrating the excellent manufacturability of the technology in a wide range of silicon processes and applications. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys’ website at http://www.mosys.com
. ABOUT CHARTERED
Chartered Semiconductor Manufacturing, one of the world’s top three dedicated semiconductor foundries, is forging a customized approach to outsourced semiconductor manufacturing by building lasting and collaborative partnerships with its customers. The Company provides flexible and cost-effective manufacturing solutions for customers, enabling the convergence of communications, computing and consumer markets. In Singapore, Chartered operates five fabrication facilities and has a sixth fab, which will be developed as a 300mm facility.
A company with both global presence and perspective, Chartered is traded on both the NASDAQ Stock Market (NASDAQ: CHRT) and on the Singapore Exchange (SGX-ST: CHARTERED). Chartered’s 3,500 employees are based at 11 locations around the world. Information about Chartered can be found at www.charteredsemi.com
.Note for Editors:
1T-SRAM® is a MoSys trademark registered in the U.S. Patent and Trademark Office.NanoAccess is a trademark of Chartered Semiconductor Manufacturing. All other trade, product, or service names referenced in this release may be trademarks or registered trademarks of their respective holders.
Chartered Safe Harbor Statement under the provisions of the United States Private Securities Litigation Reform Act of 1995
This news release may contain forward-looking statements, as defined in the safe harbor provisions of the U.S. Private Securities Litigation Reform Act of 1995. These forward-looking statements are subject to certain risks and uncertainties, which could cause actual results to differ materially. Among the factors that could cause actual results to differ materially are: the difficulties, interruptions or unforeseen delays in the implementation of our collaborative efforts with MoSys; changes in market outlook and trends; customer demands; rate of semiconductor market recovery; economic conditions in the United States as well as globally; the performance level of and technology mix in our fabrication facilities and competition. Although Chartered believes the expectations reflected in such forward-looking statements are based upon reasonable assumptions, we can give no assurance that our expectations will be attained. In addition to the foregoing factors, a description of certain other risks and uncertainties which could cause actual results to differ materially can be found in the section captioned "Risk Factors" in our Annual Report on Form 20-F and our First Quarter 2003 Quarterly Report on Form 6-K filed with the U.S. Securities and Exchange Commission. You are cautioned not to place undue reliance on these forward-looking statements, which are based on the current view of management on future events. Chartered undertakes no obligation to publicly update or revise any forward-looking statements, whether as a result of new information, future events or otherwise.