Leading electronics company to use MoSys’ memory technology for future integrated circuit developments SUNNYVALE, Calif., and GUNMA, Japan (Dec. 15, 2003) –
MoSys, Inc. (NASDAQ: MOSY), the industry's leading provider of high density SoC embedded memory solutions and SANYO Electric Co. Ltd., (NASDAQ: SANYY, Tokyo Stock Exchange 1:6764) a leading manufacturer of consumer and commercial electronic products, today announced the licensing of MoSys’ 1T-SRAM embedded memory technology to be incorporated into Sanyo’s consumer product SoC designs.
“With today’s requirements for larger embedded memories, together with the needs of increased speed and lower power, SoC designers are demanding radically new embedded memory technology. We believe that we can meet these new challenges by adopting MoSys’ 1T-SRAM memory,” said Toshio Suganuma, senior manager of SANYO Electric Co., Ltd., Semiconductor Company LSI Business Unit Design Engineering Department 2. “Sanyo has evaluated MoSys’ 1T-SRAM embedded memory technology and selected MoSys for its performance, density and power capabilities not available from other embedded memory technologies. By using MoSys’ 1T-SRAM embedded memory, our customers will benefit from SoC die area savings.”
MoSys’ 1T-SRAM technologies have already been silicon-proven in six process generations and are in high-volume production in many consumer and communications products.
"We are pleased to work with Sanyo to extend the use of our 1T-SRAM technology,” said Mark-Eric Jones, vice president and general manager of intellectual property at MoSys. “By choosing our 1T-SRAM embedded memory, Sanyo and its customers will take advantage of the industry’s highest quality embedded memory solution.”
Through its partnership with MoSys, Sanyo joins a growing list of leading semiconductor companies that have aligned with MoSys to develop high-quality integrated circuits at a competitive price. ABOUT MOSYS
Founded in 1991, MoSys (NASDAQ: MOSY), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs, while using the same standard logic manufacturing processes.1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making it ideal for embedding large memories in System on Chip (SoC) designs. MoSys’ licensees have shipped more than 50 million chips incorporating 1T-SRAM embedded memory, demonstrating the excellent manufacturability of the technology in a wide range of silicon processes and applications. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys' website at http://www.mosys.com
. ABOUT SANYO
SANYO Semiconductor Company is part of the Component Group, within SANYO Electric Co., Ltd. In the fiscal year 2002 (ended March 31, 2003) SANYO Semiconductor Company achieved 311 billion yen (US$2.48 Billion) with about 15,000 employees including those of their subsidiaries. SANYO Semiconductor Company develops and manufactures semiconductor devices and flat panel displays for leading applications in the electric industry, such as mobile communication equipment, PC/PC-related products and analog/digital AV equipment. SANYO Semiconductor Company has nine manufacturing factories in Japan and seven in the Asia-Pacific region. Sales bases for the company are located in North America, Europe, Asia and Japan. Further information is available at: www.semic.sanyo.co.jp/index_e.htm Note for Editors:
1T-SRAM® is a MoSys trademark registered in the U.S. Patent and Trademark Office. All other trade, product, or service names referenced in this release may be trademarks or registered trademarks of their respective holders.