SUNNYVALE, Calif.--(BUSINESS WIRE)--Jan. 20, 2004--MoSys, Inc., (Nasdaq:MOSY) the industry's leading provider of high density SoC embedded memory solutions, announced today that Lantronix(R), Inc., a leading provider of network connectivity and device management solutions, has begun producing chips containing MoSys' 1T-SRAM(R) embedded memory technology. Lantronix will be using the chips in a wide range of solutions that allow virtually any device to be accessed, monitored and managed over Ethernet networks.
"We selected MoSys' 1T-SRAM embedded memory technology because it offers higher performance at a lower cost while occupying less die space than alternatives," said Curt Brown, executive vice president of research and development for Lantronix. "Our networking products require the highest quality technology available at all levels of production. MoSys delivers an innovative, high density memory solution that allows the design of high-performance, cost-efficient SoCs to drive Lantronix products."
MoSys' patented 1T-SRAM memory technology enables large amounts of memory to be embedded into SoC designs using a standard logic process, providing reliability and high performance crucial to Internet and networking technology. The Lantronix chips that incorporate MoSys technology will be used to provide network connectivity and device management solutions for Lantronix' diverse customer base.
"MoSys' 1T-SRAM memory technology is ideal for any type of high-performance networking solution for the numerous benefits it affords users, including its efficient use of power and space," said Mark-Eric Jones, vice president and general manager of Intellectual Property at MoSys. "We are delighted that Lantronix chose to license MoSys' memory technology and look forward to working with the company on future generations of its advanced networking chips."
Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs, while using the same standard logic manufacturing processes.1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making it ideal for embedding large memories in System on Chip (SoC) designs. MoSys' licensees have shipped more than 50 million chips incorporating 1T-SRAM embedded memory, demonstrating the excellent manufacturability of the technology in a wide range of silicon processes and applications. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys' website at http://www.mosys.com/.
Note for Editors:
1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and Trademark Office. All other trade, product, or service names referenced in this release may be trademarks or registered trademarks of their respective holders.
SOURCE: MoSys, Inc.
"Safe Harbor" Statement under the Private Securities Litigation Reform Act of 1995: Statements in this press release regarding MoSys, Inc.'s business which are not historical facts are "forward-looking statements" that involve risks and uncertainties. For a discussion of such risks and uncertainties, which could cause actual results to differ from those contained in the forward-looking statements, see "Risk Factors" in the Company's Annual Report or Form 10-K for the most recently ended fiscal year.