Digital Multimedia Chip Company to Use MoSys' Memory for Future Cellular Rich-Multimedia Phone Products
SUNNYVALE, Calif. & BEIJING--(BUSINESS WIRE)--Feb. 17, 2004-- MoSys, Inc. (Nasdaq:MOSY), the industry's leading provider of high density SoC embedded memory solutions and Vimicro Corporation, a cutting-edge digital multimedia chip company, today announced the licensing of MoSys' 1T-SRAM(R) embedded memory technology to be incorporated into Vimicro's next-generation multimedia (video/audio/graphics/music) processors for cellular phones.
"A significant consideration in cell phone design is the need for low power and enhanced multimedia processing capabilities and we believe that we can meet these new challenges by adopting MoSys' 1T-SRAM memory," said Jun Zhu, vice president of Engineering of Vimicro. "MoSys offers high-performance embedded memory technology utilizing less power and space, thus providing an enhanced product at a lower cost staying ahead of industry standards."
MoSys' 1T-SRAM technologies have already been silicon-proven in six process generations and are in high-volume production in many consumer and communications products.
"We are pleased to work with Vimicro to extend the use of our 1T-SRAM technology," said Mark-Eric Jones, vice president and general manager of intellectual property at MoSys. "By choosing our 1T-SRAM embedded memory, Vimicro will take advantage of the industry's highest quality embedded memory solution."
Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs, while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making it ideal for embedding large memories in System on Chip (SoC) designs. MoSys' licensees have shipped more than 50 million chips incorporating 1T-SRAM embedded memory, demonstrating the excellent manufacturability of the technology in a wide range of silicon processes and applications. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys' website at http://www.mosys.com.
Vimicro Corporation is a leading China-based semiconductor company providing chips and solutions that enable multimedia communication and applications for worldwide telecommunication, PC, mobile, and consumer markets. Vimicro has strategic partnership with China Telecom, China Netcom, China Mobile, China Unicom, Microsoft, and Fujitsu, to address a large market in Internet and mobile multimedia applications. Supported by Chinese Ministry of Information Industry, Vimicro is now helping to standardize Chinese Internet and mobile multimedia applications through its VXP technology platform. Vimicro has its headquarter in Beijing, and subsidiaries in Shanghai, Shenzhen, Hong Kong, and Silicon Valley.
Please visit www.vimicro.com for more information.
Note for Editors:
1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and Trademark Office. All other trade, product, or service names referenced in this release may be trademarks or registered trademarks of their respective holders.
SOURCE: MoSys, Inc.
"Safe Harbor" Statement under the Private Securities Litigation Reform Act of 1995: Statements in this press release regarding MoSys, Inc.'s business which are not historical facts are "forward-looking statements" that involve risks and uncertainties. For a discussion of such risks and uncertainties, which could cause actual results to differ from those contained in the forward-looking statements, see "Risk Factors" in the Company's Annual Report or Form 10-K for the most recently ended fiscal year.