Chartered's Customers Benefit from Proven IP With Highest Density of Any Third-Party, Open Offering of Embedded High-Performance RAM
SUNNYVALE, Calif. and SINGAPORE--(BUSINESS WIRE)--July 27, 2004 -- MoSys, Inc. (Nasdaq:MOSY), the industry's leading provider of advanced high density embedded memory solutions, and Chartered Semiconductor Manufacturing (Nasdaq:CHRT) (SGX:CHARTERED), one of the world's top three dedicated semiconductor foundries, today announced the silicon validation of MoSys 1T-SRAM-Q(TM) (Quad density) embedded memory technology on Chartered's 0.13-micron industry-standard logic process. Their joint efforts have produced functional silicon devices and already resulted in new design engagements with mutual customers. The final phases of qualification are underway with full characterization data to be available by the end of the third quarter 2004.
With a complete macro density of approximately 1.2-square millimeters per megabit, 1T-SRAM-Q technology enables designers to embed even larger high-performance memories in their system-on-chip (SoC) designs. 1T-SRAM-Q technology incorporates MoSys' proprietary Transparent Error Correction(TM) (TEC(TM)) technology delivering the additional benefits of improved yield and reliability with elimination of laser repair and soft error concerns.
"Chartered's 0.13 silicon verification of 1T-SRAM-Q memory demonstrates MoSys' continued commitment to develop the best-in-class memory technology," commented Dr. Fu-Chieh Hsu, president and CEO of MoSys. "Now, SoC designers can integrate over 100 megabits of high-performance embedded memory in 0.13-micron designs."
1T-SRAM-Q memory is based on MoSys' patented Folded Area Capacitor(TM) (FAC (TM)) technology to reduce bit cell size by literally folding the bit cell gate oxide capacitor vertically down the STI sidewall, thus dramatically reducing the horizontal area. This results in typical bit cell sizes of 0.57 square microns at the 0.13-micron process node.
"The memory requirements of our customers are increasing over time and with each technology node. By coupling MoSys' high-density embedded memory technologies with our production-proven 0.13-micron process, we're giving designers more choices," said Kevin Meyer, vice president of worldwide marketing and services at Chartered. "With access to these world-class solutions, our customers can reduce the risks of implementing leading-edge, memory-intensive SoCs and still target the highest possible yields."
The 1T-SRAM-Q validation effort is an extension of the ongoing collaboration by the two companies to offer optimized high-density memory solutions on multiple technology generations and products. MoSys and Chartered have already successfully qualified MoSys' 1T-SRAM-R high-density memory solution on Chartered's 0.18-micron and 0.13-micron process technologies. The companies are in the process of qualifying the 1T-SRAM-R technology on the 90nm process platform jointly developed by Chartered and IBM.
Chartered Semiconductor Manufacturing, one of the world's top three dedicated foundries, is forging a customized approach to outsourced semiconductor manufacturing by building lasting and collaborative partnerships with its customers. The company provides flexible and cost-effective manufacturing solutions for customers, enabling the convergence of communications, computing and consumer markets. In Singapore, Chartered operates four fabrication facilities and has a fifth fab, the Company's first 300mm facility, which is expected to begin pilot production by the end of 2004.
A company with both global presence and perspective, Chartered is traded on both the Nasdaq Stock Market (Nasdaq:CHRT) and on the Singapore Exchange (SGX:CHARTERED). Information about Chartered can be found at http://www.charteredsemi.com
Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs, while using the same standard logic manufacturing processes.
1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making it ideal for embedding large memories in System on Chip (SoC) designs. MoSys' licensees have shipped more than 50 million chips incorporating 1T-SRAM embedded memories, demonstrating the excellent manufacturability of the technology in a wide range of silicon processes and applications. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, Calif. 94085. More information is available on MoSys' website at http://www.mosys.com.
1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and Trademark Office. All other trade, product, or service names referenced in this release may be trademarks or registered trademarks of their respective holders.
Chartered Safe Harbor Statement under the provisions of the United States Private Securities Litigation Reform Act of 1995
This news release may contain forward-looking statements, as defined in the safe harbor provisions of the U.S. Private Securities Litigation Reform Act of 1995. These forward-looking statements reflect our current views with respect to future events, and are subject to certain risks and uncertainties, which could cause actual results to differ materially from historical results or those anticipated. For example: changes in market outlook; the rate of semiconductor market recovery; economic conditions in the United States as well as globally; customer demands; the performance level of our fabrication facilities; the successful implementation of our joint efforts with MoSys and competition. Although we believe the expectations reflected in such forward-looking statements are based upon reasonable assumptions, we can give no assurance that our expectations will be attained. In addition to the foregoing factors, a description of certain other risks and uncertainties which could cause actual results to differ materially can be found in the section captioned "Risk Factors" in our Annual Report on Form 20-F filed with the U.S. Securities and Exchange Commission. You are cautioned not to place undue reliance on these forward-looking statements, which are based on the current view of management on future events. We undertake no obligation to publicly update or revise any forward-looking statements, whether as a result of new information, future events or otherwise.