Matsushita, Tower deploying 0.18-micron embedded flash


EE Times: Latest News Matsushita, Tower deploying 0.18-micron embedded flash
(10/06/2004 9:01 PM EDT) URL: http://www.eetimes.com/showArticle.jhtml?articleID=49900127
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SAN JOSE, Calif. � Japan's Matsushita Electric Industrial Co. and Isreal's Tower Semiconductor Ltd. have put the finishing touches on a co-development deal in the embedded flash-memory market, according to sources at the FSA Expo here. Matsushita and Tower co-developed a 0.18-micron embedded flash process, based on technology from Saifun Semiconductor Ltd., sources said. Saifun is the developer of NROM technology, which stores two bits within one memory cell with memory sites at each end of floating gate. Initially, Matsushita and Tower devised the 0.18-micron embedded flash process within Matsushita's fabs in Japan, sources said. Tower is bringing the process up for foundry purposes within its own Fab 2 plant, an 8-inch facility in Isreal, they added. Tower also offers a 0.5-micron embedded flash process, based on technology from Saifun.
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