MOSAID Initiates Litigation Against Hynix for Patent Infringement
OTTAWA, Ontario, Canada – Janaury 19, 2005 - MOSAID Technologies Incorporated (TSX:MSD) today announced that it has initiated litigation against Hynix Semiconductor Inc. and two of its U.S.-based affiliates for infringement of six of MOSAID's United States patents. The patents were granted on fundamental Dynamic Random Access Memory (DRAM) circuit inventions, which MOSAID pioneered as a semiconductor design company. The suit was filed in the United States District Court for the Eastern District of Texas, Tyler Division.
In its complaint, MOSAID claims that Hynix has infringed and is infringing by making and selling products, including DRAMs, that utilize MOSAID's DRAM patents.
MOSAID will be represented by Jones Day, a top U.S. law firm specializing in patent litigation.
About MOSAID
MOSAID Technologies Incorporated makes memory better through the development and licensing of intellectual property and the supply of memory test and analysis systems to semiconductor manufacturers, foundries and fabless semiconductor companies around the world.
Founded in 1975, MOSAID is based in Ottawa, Ontario, Canada, with offices in Santa Clara, California; Newcastle upon Tyne, U.K; and Tokyo, Japan. For more information, visit the Company's web site at www.mosaid.com.
Forward Looking Information
This document may contain forward-looking statements relating to the Company’s operations or to the environment in which the Company operates. Such statements are based on current expectations that are subject to a variety of risks and uncertainties that are difficult to predict and/or beyond MOSAID’s control. Actual results may differ materially from those expressed in any forward-looking statements, due to factors such as customer demand and timing of purchasing decisions, product and business mix, competitive products, pricing pressures as well as general economic and industry conditions. MOSAID assumes no obligation to update these forward-looking statements, or to update the reasons why actual results could differ from those reflected in any forward-looking statements. Additional information identifying risks and uncertainties is contained in other public filings with the Ontario Securities Commission.
|
Related News
- MOSAID Initiates Patent Infringement Litigation Against Elpida
- WiLAN Initiates LTE-Related Patent Infringement Litigations
- MOSAID Expands Patent Infringement Suit Against Elpida
- MOSAID Files Patent Infringement Suit Against NVIDIA, Freescale and Interphase
- MOSAID Files Wireless Patent Infringement Litigation
Breaking News
- Omni Design Technologies Joins Intel Foundry Accelerator IP Alliance
- Efabless Announces the Release of the OpenLane 2 Development Platform, Transforming Custom Silicon Design Flows
- TSMC Reports First Quarter EPS of NT$8.70
- Brisbane Silicon publishes DPTx 1.4 IP Core
- GUC provides 3DIC ASIC total service package to AI/HPC/Networking customers
Most Popular
- U.S. Subsidy for TSMC Has AI Chips, Tech Leadership in Sight
- Cadence Unveils Palladium Z3 and Protium X3 Systems to Usher in a New Era of Accelerated Verification, Software Development and Digital Twins
- Zhuhai Chuangfeixin: OTP IP Based on 90nm CMOS Image Sensor Process Technology Successfully Mass Production
- Silvaco Announces Expanded Partnership with Micron Technology
- OPENEDGES Unveils ENLIGHT Pro: A High-Performance NPU IP Quadrupling its Previous Generation's Performance
E-mail This Article | Printer-Friendly Page |