SUNNYVALE, Calif. & SAPPORO, Japan--(BUSINESS WIRE)--March 14, 2005--MoSys, Inc. (Nasdaq:MOSY), the industry's leading provider of high density SoC embedded memory solutions today announced that HUDSON Soft Co., Ltd. (OSAKA:4822) a leading manufacturer of game software and entertainment equipment, successfully verified MoSys' 1T-SRAM(R) embedded memory technology using UMC's 150nm process technology. The Hudson Soft Video Game Controller is now in volume production using 1T-SRAM(R) technology for its embedded memory.
"1T-SRAM(R) technology made it possible to develop our 32-bit, single chip LSI with network function achieving the required high performance, top quality and cost effectiveness. It had started production and is adopted into electronic toys that have been launched in Japan in November 2004," said Satoru Murakami, Corporate Executive Officer, Head of the Core Technology Division, Hudson Soft.
"We are pleased that Hudson Soft has successfully started volume production," expressed Karen Lamar, MoSys' Vice President of Sales and Marketing. "This comes as a result of the close relationship between Hudson Soft and MoSys teams."
Ken Liou, Director - IP Development and Design Support division at UMC, said, "UMC's SoC solution foundry approach involves working closely with our customers and supply chain partners to achieve production success in the shortest time possible. This effort has paid off again with the successful volume production of Hudson Soft's Video Game Controller incorporating Mosys's 1T-SRAM(R) technology. We look forward to working with both companies for their future product lines."
"The success of this device opens the electronic toy markets for MoSys' 1T-SRAM(R) technology," added Gerry Shimauchi, MoSys International's Japan General Manager. "It proves the advantages brought by 1T-SRAM(R) based products are not limited to communication and consumer applications. Our close relationship with Hudson Soft will allow the development of innovative products for many other application fields."
ABOUT MOSYS
Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM(R) technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM(R) memory results in the technology achieving much higher density than traditional four or six transistor SRAMs, while using the same standard logic manufacturing processes. 1T-SRAM(R) technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making it ideal for embedding large memories in System on Chip (SoC) designs. MoSys' licensees have shipped more than 80 million chips incorporating 1T-SRAM(R) embedded memories, demonstrating the excellent manufacturability of the technology in a wide range of silicon processes and applications. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys' website at http://www.mosys.com.
ABOUT HUDSON
HUDSON SOFT CO., LTD. (Headquarters: Sapporo, Hokkaido, Japan) (OSAKA:4822) is the one of major Japanese game developers since 1973. HUDSON has developed premier consumer game titles for Nintendo, and Sony Computer Entertainment.
Company has recently reorganized its business segments and focused resources on Consumer Content Business for home-use game consoles, Network Content Business providing mobile phone content services and online-games. For more information, visit our website at www.hudson.co.jp.
Note for Editors:
1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and Trademark Office. All other trade, product, or service names referenced in this release may be trademarks or registered trademarks of their respective holders.