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• GLOBALFOUNDRIES Extends Silicon Photonics Roadmap to Meet Explosive Demand for Datacenter Connectivity (Wednesday Mar. 14, 2018)
  GLOBALFOUNDRIES today revealed new details of its silicon photonics roadmap to enable the next generation of optical interconnects for datacenter and cloud applications. The company has now qualified the industry’s first 90nm manufacturing process using 300mm wafers, while also unveiling its upcoming 45nm technology to deliver even greater bandwidth and energy efficiency.
  
  
• Samsung Strengthens its Foundry Customer Support with New SAFE Foundry Ecosystem Program (Thursday Jan. 25, 2018)
  Samsung Electronics Co., Ltd., a world leader in advanced semiconductor technology, has announced today its continued commitment to first-pass silicon success for its foundry customers’ chip designs by launching the Samsung Advanced Foundry Ecosystem (SAFETM) program.
  
  
• GLOBALFOUNDRIES Delivering 45nm RF SOI Customer Prototypes for 5G Applications (Wednesday Jan. 24, 2018)
  GLOBALFOUNDRIES today announced that its 45nm RF SOI (45RFSOI) technology platform has been qualified and is ready for volume production.
  
  
• STMicroelectronics Selects GLOBALFOUNDRIES 22FDX to Extend Its FD-SOI Platform and Technology Leadership (Tuesday Jan. 09, 2018)
  GLOBALFOUNDRIES and STMicroelectronics (NYSE: STM) today announced that ST has selected GF’s 22nm FD-SOI (22FDX®) technology platform to support its next-generation of processor solutions for industrial and consumer applications.
  
  
• UMC Announces Availability of 40nm SST Embedded Flash Process (Thursday Dec. 21, 2017)
  UMC today announced the availability of the company’s 40nm process platform that incorporates Silicon Storage Technology’s (SST) embedded SuperFlash® non-volatile memory. The newly available 40nm SST process features a >20% reduction in eFlash cell size and 20-30% macro area over UMC’s mass production 55nm SST technology.
  
  
• X-FAB Introduces New Low-Power eFlash Block Optimized for Energy Harvesting & IoT Devices (Tuesday Dec. 19, 2017)
  X-FAB today announced the availability of two new Non-Volatile Memory (NVM) IP solutions - a low power embedded Flash (eFlash) IP block and a NVRAM compiler.
  
  
• SMIC and Efinix Quickly Deliver the First Quantum-Accelerated Silicon Product (Wednesday Dec. 13, 2017)
  SMIC and Efinix™ , an innovator in programmable products platforms and technologies, today jointly announced that Efinix has received silicon product samples for its first Quantum™ accelerated programmable product platform built on SMIC's 40nm process.
  
  
• GLOBALFOUNDRIES and Ayar Labs Establish Strategic Collaboration to Speed Up Data Center Applications (Monday Dec. 04, 2017)
  GLOBALFOUNDRIES and Ayar Labs, a startup bringing optical input/output (I/O) to silicon chips, today announced a strategic collaboration to co-develop and commercialize differentiated silicon photonic technology solutions.
  
  
• Samsung Starts Mass Production of Its 2nd Generation 10nm FinFET Process Technology (Wednesday Nov. 29, 2017)
  Samsung Electronics today announced that its Foundry Business has commenced mass production of System-on-Chip (SoC) products built on its second generation 10-nanometer (nm) FinFET process technology, 10LPP (Low Power Plus).
  
  
• GLOBALFOUNDRIES Demonstrates Industry-Leading 112G Technology for Next-Generation Connectivity Solutions (Wednesday Nov. 15, 2017)
  GLOBALFOUNDRIES today announced it has demonstrated the next generation of 112Gbps SerDes capability. GF’s High Speed SerDes (HSS) solutions include best-in-class architecture for 112G to 56G, 30G and 16G SerDes IPs to enable connectivity for cloud computing, hyperscale data center, and networking applications.
  
  
• Cypress Achieves Aerospace-Grade QML Certification for its 65nm and 40nm SRAM Devices at UMC (Wednesday Nov. 15, 2017)
  Cypress and UMC today announced that Cypress' 65nm and 40nm technology platforms are the industry's first to achieve Qualified Manufacturers List (QML) certification for their advance product flows.
  
  
• GLOBALFOUNDRIES, Fudan Team to Deliver Next Generation Dual Interface Smart Card (Wednesday Nov. 15, 2017)
  GLOBALFOUNDRIES and Fudan Microelectronics Group today announced they have produced a next generation dual interface CPU card, using GF’s 55nm Low Power Extended (55LPx) technology platform.
  
  
• Samsung Completes Qualification of 8nm LPP Process (Thursday Oct. 19, 2017)
  Samsung Electronics, a world leader in advanced semiconductor technology, announced today that 8-nanometer (nm) FinFET process technology, 8LPP (Low Power Plus), has been qualified and is ready for production.
  
  
• GLOBALFOUNDRIES Introduces New Automotive Platform to Fuel Tomorrow's Connected Car (Thursday Oct. 12, 2017)
  GLOBALFOUNDRIES today unveiled AutoPro™, a new platform designed to provide automotive customers a broad set of technology solutions and manufacturing services that minimize certification efforts and speed time-to-market.
  
  
• TSMC to Build 3nm Fab in Tainan Science Park (Friday Sep. 29, 2017)
  TSMC today announced that, following careful evaluation, the Company’s planned advanced 3nm fab will be located in the Tainan Science Park to fully leverage the company’s existing cluster advantage and the benefit of a comprehensive supply chain.
  
  
• SMIC and Sanechips (ZTE Microelectronics) Announce the First Commercial NB-IoT Chip Designed and Manufactured in Mainland China (Thursday Sep. 28, 2017)
  SMIC and Sanechips Technology Co., Ltd. (previously named ZTE Microelectronics Technology Co., Ltd.), a global leader in telecommunications and information technology, jointly announced the launch of RoseFinch7100 which is the first commercial NB-IoT (Narrow Band Internet of Things) chip designed and manufactured by Mainland Chinese firms independently.
  
  
• TowerJazz and Crocus Expand Presence in Magnetic Sensors Market through Successful Licensing of Crocus' IP and Volume Manufacturing by TowerJazz (Wednesday Sep. 27, 2017)
  TowerJazz today announce volume manufacturing of Crocus TMR (Tunnel MagnetoResistance) sensors, using TowerJazz’s 0.13um CMOS process with a dedicated magnetic module in the Cu BEOL.
  
  
• GLOBALFOUNDRIES Unveils Vision and Roadmap for Next-Generation 5G Applications (Thursday Sep. 21, 2017)
  GLOBALFOUNDRIES today announced its vision and roadmap for a sweeping range of technology platforms designed to help customers transition to next-generation 5G wireless networks.
  
  
• GLOBALFOUNDRIES Delivers Custom 14nm FinFET Technology for IBM Systems (Thursday Sep. 21, 2017)
  GLOBALFOUNDRIES is now delivering in volume its 14nm High Performance (HP) technology that will enable IBM’s next-generation of processors for server systems. The jointly developed 14HP process is specifically designed to deliver the ultra-high performance and data-processing capacity IBM needs to support its cloud, commerce, and enterprise solutions in the era of big data and cognitive computing.
  
  
• GLOBALFOUNDRIES Announces Availability of Embedded MRAM on Leading 22FDX FD-SOI Platform (Thursday Sep. 21, 2017)
  GLOBALFOUNDRIES today announced the availability of its scalable, embedded magnetoresistive non-volatile memory (eMRAM) technology on the company’s 22nm FD-SOI (22FDX®) platform. As the industry’s most advanced embedded memory solution, GF’s 22FDX eMRAM provides high performance and superior reliability for broad applications in consumer and industrial controllers, data centers, Internet of Things (IoT), and automotive.
  
  
• GLOBALFOUNDRIES Introduces New 12nm FinFET Technology for High-Performance Applications (Thursday Sep. 21, 2017)
  GLOBALFOUNDRIES today announced plans to introduce a new 12nm Leading-Performance (12LP) FinFET semiconductor manufacturing process. The technology is expected to deliver better density and a performance boost over GF’s current-generation 14nm FinFET offering, satisfying the processing needs of the most demanding compute-intensive applications from artificial intelligence and virtual reality to high-end smartphones and networking infrastructure.
  
  
• GLOBALFOUNDRIES and Soitec Enter Into Long-term Supply Agreement on FD-SOI Wafers (Wednesday Sep. 20, 2017)
  GLOBALFOUNDRIES and Soitec today announced that they have entered into a five-year agreement to ensure the volume supply of state-of-the-art fully depleted silicon-on-insulator (FD-SOI) wafers.
  
  
• Intel Technology and Manufacturing Day in China Showcases 10 nm Updates, FPGA Progress and Industry's First 64-Layer 3D NAND for Data Center (Tuesday Sep. 19, 2017)
  Disclosures included power and performance updates for Intel’s 10 nm process, high-level plans for Intel’s first 10 nm FPGA, and an announcement that the company is shipping the industry’s first commercially available 64-layer 3D NAND for data center applications.
  
  
• SMIC, Brite Semiconductor and Synopsys Collaborate to Deliver Low Power Platform for the Internet of Things (Monday Sep. 18, 2017)
  Brite, SMIC and Synopsys today announced a collaboration resulting in an IoT platform that enables designers, system integrators and OEMs to accelerate and differentiate their next-generation IoT systems.
  
  
• SJSemi and Qualcomm Jointly Announce Qualification of 10nm Ultra-high Density Wafer Bumping Technology (Friday Sep. 15, 2017)
  SJ Semiconductor Corp. (SJSemi) and Qualcomm Technologies, Inc., a subsidiary of Qualcomm Incorporated, jointly announced that SJSemi has started the qualification of 10nm Ultra-high Density wafer bumping for Qualcomm Technologies. This represents SJSemi's further improvement in processing techniques and capabilities soon after its last year's success in 28nm and 14nm wafer bumping mass production.
  
  
• Soitec launches FD-SOI pilot line in Singapore (Thursday Sep. 14, 2017)
  Soitec, a leader in designing and manufacturing semiconductor materials for the electronics industry, is launching a pilot line to produce fully depleted silicon-on-insulator (FD-SOI) wafers in its Singapore wafer fab.
  
  
• Samsung Strengthens Advanced Foundry Portfolio With New 11nm LPP and 7nm LPP With EUV Technology (Tuesday Sep. 12, 2017)
  Samsung Electronics Co., Ltd., the world leader in advanced semiconductor technology, today announced it has added 11-nanometer (nm) FinFET process technology (11LPP, Low Power Plus) to its advanced foundry process portfolio, offering customers with an even wider range of options for their next-generation products.
  
  
• Xilinx, Arm, Cadence, and TSMC Announce World's First CCIX Silicon Demonstration Vehicle in 7nm Process Technology (Monday Sep. 11, 2017)
  Xilinx, Arm, Cadence Design Systems and TSMC today announced a collaboration to build the first Cache Coherent Interconnect for Accelerators (CCIX) test chip in TSMC 7nm FinFET process technology for delivery in 2018. The test chip aims to provide a silicon proof point to demonstrate the capabilities of CCIX in enabling multi-core high-performance Arm® CPUs working via a coherent fabric to off-chip FPGA accelerators.
  
  
• Ambiq Micro and TSMC Deliver World's Lowest Energy Consumption for Huawei's Fitness Wearables (Thursday Sep. 07, 2017)
  Ambiq Micro, the pioneer and leader in ultra-low power solutions, today announced that Huawei has selected the Apollo2 platform, built on TSMC's 40nm Near-Vt technology platform, to power its new line of lightweight fitness wearables including the newly launched Huawei Band 2 Pro.
  
  
• SILTERRA Unveils 180nm Ultra Low Leakage Technology To Position in IoT Sensor Hub IC Market (Wednesday Sep. 06, 2017)
  SilTerra today unveiled its latest 0.18-micron CMOS based Ultra Low Leakage (180nm ULL) process technology. Together with its partner, VeriSilicon Holding Co Ltd, to jointly announce the release of 180nm ULL physical IP design kit to serve the fast growing Internet-Of-Things (IoT) Sensor Hub IC market application.