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• GLOBALFOUNDRIES, Fudan Team to Deliver Next Generation Dual Interface Smart Card (Wednesday Nov. 15, 2017)
  GLOBALFOUNDRIES and Fudan Microelectronics Group today announced they have produced a next generation dual interface CPU card, using GF’s 55nm Low Power Extended (55LPx) technology platform.
  
  
• Samsung Completes Qualification of 8nm LPP Process (Thursday Oct. 19, 2017)
  Samsung Electronics, a world leader in advanced semiconductor technology, announced today that 8-nanometer (nm) FinFET process technology, 8LPP (Low Power Plus), has been qualified and is ready for production.
  
  
• GLOBALFOUNDRIES Introduces New Automotive Platform to Fuel Tomorrow's Connected Car (Thursday Oct. 12, 2017)
  GLOBALFOUNDRIES today unveiled AutoPro™, a new platform designed to provide automotive customers a broad set of technology solutions and manufacturing services that minimize certification efforts and speed time-to-market.
  
  
• TSMC to Build 3nm Fab in Tainan Science Park (Friday Sep. 29, 2017)
  TSMC today announced that, following careful evaluation, the Company’s planned advanced 3nm fab will be located in the Tainan Science Park to fully leverage the company’s existing cluster advantage and the benefit of a comprehensive supply chain.
  
  
• SMIC and Sanechips (ZTE Microelectronics) Announce the First Commercial NB-IoT Chip Designed and Manufactured in Mainland China (Thursday Sep. 28, 2017)
  SMIC and Sanechips Technology Co., Ltd. (previously named ZTE Microelectronics Technology Co., Ltd.), a global leader in telecommunications and information technology, jointly announced the launch of RoseFinch7100 which is the first commercial NB-IoT (Narrow Band Internet of Things) chip designed and manufactured by Mainland Chinese firms independently.
  
  
• TowerJazz and Crocus Expand Presence in Magnetic Sensors Market through Successful Licensing of Crocus' IP and Volume Manufacturing by TowerJazz (Wednesday Sep. 27, 2017)
  TowerJazz today announce volume manufacturing of Crocus TMR (Tunnel MagnetoResistance) sensors, using TowerJazz’s 0.13um CMOS process with a dedicated magnetic module in the Cu BEOL.
  
  
• GLOBALFOUNDRIES Unveils Vision and Roadmap for Next-Generation 5G Applications (Thursday Sep. 21, 2017)
  GLOBALFOUNDRIES today announced its vision and roadmap for a sweeping range of technology platforms designed to help customers transition to next-generation 5G wireless networks.
  
  
• GLOBALFOUNDRIES Delivers Custom 14nm FinFET Technology for IBM Systems (Thursday Sep. 21, 2017)
  GLOBALFOUNDRIES is now delivering in volume its 14nm High Performance (HP) technology that will enable IBM’s next-generation of processors for server systems. The jointly developed 14HP process is specifically designed to deliver the ultra-high performance and data-processing capacity IBM needs to support its cloud, commerce, and enterprise solutions in the era of big data and cognitive computing.
  
  
• GLOBALFOUNDRIES Announces Availability of Embedded MRAM on Leading 22FDX FD-SOI Platform (Thursday Sep. 21, 2017)
  GLOBALFOUNDRIES today announced the availability of its scalable, embedded magnetoresistive non-volatile memory (eMRAM) technology on the company’s 22nm FD-SOI (22FDX®) platform. As the industry’s most advanced embedded memory solution, GF’s 22FDX eMRAM provides high performance and superior reliability for broad applications in consumer and industrial controllers, data centers, Internet of Things (IoT), and automotive.
  
  
• GLOBALFOUNDRIES Introduces New 12nm FinFET Technology for High-Performance Applications (Thursday Sep. 21, 2017)
  GLOBALFOUNDRIES today announced plans to introduce a new 12nm Leading-Performance (12LP) FinFET semiconductor manufacturing process. The technology is expected to deliver better density and a performance boost over GF’s current-generation 14nm FinFET offering, satisfying the processing needs of the most demanding compute-intensive applications from artificial intelligence and virtual reality to high-end smartphones and networking infrastructure.
  
  
• GLOBALFOUNDRIES and Soitec Enter Into Long-term Supply Agreement on FD-SOI Wafers (Wednesday Sep. 20, 2017)
  GLOBALFOUNDRIES and Soitec today announced that they have entered into a five-year agreement to ensure the volume supply of state-of-the-art fully depleted silicon-on-insulator (FD-SOI) wafers.
  
  
• Intel Technology and Manufacturing Day in China Showcases 10 nm Updates, FPGA Progress and Industry's First 64-Layer 3D NAND for Data Center (Tuesday Sep. 19, 2017)
  Disclosures included power and performance updates for Intel’s 10 nm process, high-level plans for Intel’s first 10 nm FPGA, and an announcement that the company is shipping the industry’s first commercially available 64-layer 3D NAND for data center applications.
  
  
• SMIC, Brite Semiconductor and Synopsys Collaborate to Deliver Low Power Platform for the Internet of Things (Monday Sep. 18, 2017)
  Brite, SMIC and Synopsys today announced a collaboration resulting in an IoT platform that enables designers, system integrators and OEMs to accelerate and differentiate their next-generation IoT systems.
  
  
• SJSemi and Qualcomm Jointly Announce Qualification of 10nm Ultra-high Density Wafer Bumping Technology (Friday Sep. 15, 2017)
  SJ Semiconductor Corp. (SJSemi) and Qualcomm Technologies, Inc., a subsidiary of Qualcomm Incorporated, jointly announced that SJSemi has started the qualification of 10nm Ultra-high Density wafer bumping for Qualcomm Technologies. This represents SJSemi's further improvement in processing techniques and capabilities soon after its last year's success in 28nm and 14nm wafer bumping mass production.
  
  
• Soitec launches FD-SOI pilot line in Singapore (Thursday Sep. 14, 2017)
  Soitec, a leader in designing and manufacturing semiconductor materials for the electronics industry, is launching a pilot line to produce fully depleted silicon-on-insulator (FD-SOI) wafers in its Singapore wafer fab.
  
  
• Samsung Strengthens Advanced Foundry Portfolio With New 11nm LPP and 7nm LPP With EUV Technology (Tuesday Sep. 12, 2017)
  Samsung Electronics Co., Ltd., the world leader in advanced semiconductor technology, today announced it has added 11-nanometer (nm) FinFET process technology (11LPP, Low Power Plus) to its advanced foundry process portfolio, offering customers with an even wider range of options for their next-generation products.
  
  
• Xilinx, Arm, Cadence, and TSMC Announce World's First CCIX Silicon Demonstration Vehicle in 7nm Process Technology (Monday Sep. 11, 2017)
  Xilinx, Arm, Cadence Design Systems and TSMC today announced a collaboration to build the first Cache Coherent Interconnect for Accelerators (CCIX) test chip in TSMC 7nm FinFET process technology for delivery in 2018. The test chip aims to provide a silicon proof point to demonstrate the capabilities of CCIX in enabling multi-core high-performance Arm® CPUs working via a coherent fabric to off-chip FPGA accelerators.
  
  
• Ambiq Micro and TSMC Deliver World's Lowest Energy Consumption for Huawei's Fitness Wearables (Thursday Sep. 07, 2017)
  Ambiq Micro, the pioneer and leader in ultra-low power solutions, today announced that Huawei has selected the Apollo2 platform, built on TSMC's 40nm Near-Vt technology platform, to power its new line of lightweight fitness wearables including the newly launched Huawei Band 2 Pro.
  
  
• SILTERRA Unveils 180nm Ultra Low Leakage Technology To Position in IoT Sensor Hub IC Market (Wednesday Sep. 06, 2017)
  SilTerra today unveiled its latest 0.18-micron CMOS based Ultra Low Leakage (180nm ULL) process technology. Together with its partner, VeriSilicon Holding Co Ltd, to jointly announce the release of 180nm ULL physical IP design kit to serve the fast growing Internet-Of-Things (IoT) Sensor Hub IC market application.
  
  
• GLOBALFOUNDRIES Demonstrates 2.5D High-Bandwidth Memory Solution for Data Center, Networking, and Cloud Applications (Wednesday Aug. 09, 2017)
  GLOBALFOUNDRIES today announced that it has demonstrated silicon functionality of a 2.5D packaging solution for its high-performance 14nm FinFET FX-14™ integrated design system for application-specific integrated circuits (ASICs).
  
  
• GLOBALFOUNDRIES, Silicon Mobility Deliver the Industry's First Automotive FPCU to Boost Performance for Hybrid and Electric Vehicles (Thursday Aug. 03, 2017)
  GLOBALFOUNDRIES and Silicon Mobility today announced they have successfully produced the industry’s first automotive Field Programmable Controller Unit (FPCU) solution, called OLEA® T222.
  
  
• GLOBALFOUNDRIES, ON Semiconductor Deliver the Industry's Lowest Power Bluetooth Low Energy SoC Family (Tuesday Jun. 20, 2017)
  GLOBALFOUNDRIES and ON Semiconductor (Nasdaq: ON) today announced the availability of a System-on-Chip (SoC) family of devices, on GF’s 55nm Low Power Extended (55LPx), RF-enabled process technology platform.
  
  
• GLOBALFOUNDRIES on Track to Deliver Leading-Performance 7nm FinFET Technology (Tuesday Jun. 13, 2017)
  GLOBALFOUNDRIES today announced the availability of its 7nm Leading-Performance (7LP) FinFET semiconductor technology, delivering a 40 percent generational performance boost to meet the needs of applications such as premium mobile processors, cloud servers and networking infrastructure.
  
  
• GLOBALFOUNDRIES Launches 7nm ASIC Platform for Data Center, Machine Learning, and 5G Networks (Tuesday Jun. 13, 2017)
  GLOBALFOUNDRIES today announced the availability of FX-7 TM, an application-specific integrated circuit (ASIC) offering built on the company’s 7nm FinFET process technology. FX-7 is an integrated design platform that combines leading-edge manufacturing process technology with a differentiated suite of intellectual property and 2.5D/3D packaging to deliver the industry’s most complete solution for data center, machine learning, automotive, wired communications, and 5G wireless applications.
  
  
• Samsung Set to Lead the Future of Foundry with Comprehensive Process Roadmap Down to 4nm (Thursday May. 25, 2017)
  Samsung Electronics, a world leader in advanced semiconductor technology, today announced a comprehensive foundry process technology roadmap to help customers design and manufacture faster, more power efficient chips.
  
  
• GLOBALFOUNDRIES and Chengdu Partner to Expand FD-SOI Ecosystem in China (Tuesday May. 23, 2017)
  GLOBALFOUNDRIES and the Chengdu municipality today announced an investment to spur innovation in China’s semiconductor industry. The partners plan to build a world-class FD-SOI ecosystem including multiple design centers in Chengdu and university programs across China.
  
  
• Samsung Completes Qualification of its 2nd Generation 10nm Process Technology (Thursday Apr. 20, 2017)
  Samsung Electronics Co., Ltd., a world leader in advanced semiconductor technology, announced today that its second generation 10-nanometer (nm) FinFET process technology, 10LPP (Low Power Plus), has been qualified and is ready for production.
  
  
• Samsung Electronics on Track for 10nm FinFET Process Technology Production Ramp-up (Thursday Mar. 16, 2017)
  Samsung Electronics announced today that its production ramp-up of the 10-nanometer (nm) FinFET process technology is on track with steady high yield to meet customer needs on schedule.
  
  
• SMIC Signs License Agreement For Invensas' DBI(R) Technology (Wednesday Mar. 15, 2017)
  SMIC has executed a technology transfer and license agreement for Invensas' Direct Bond Interconnect (DBI®) technology. Through this agreement, SMIC will be able to offer this bonding technology for use by image sensor manufacturing customers. Invensas is a wholly owned subsidiary of Xperi.
  
  
• UMC and Synopsys Collaboration Speeds 14-nm Custom Design (Tuesday Mar. 14, 2017)
  Synopsys and UMC today announced that the two companies have worked together to enable Synopsys Custom Compiler and Laker® custom design tools to be used with UMC’s 14-nanometer (nm) FinFET process.