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1.8V Fault Tolerant General Purpose I/O Inline Pad Set
The 1.8V GPIO FT library provides ultra low leakage general purpose bidirectional I/O cells. These programmable, multi-voltage I/O’s give the system designer the flexibility to design to a wide range of performance targets.
These 22nm libraries are available in inline and staggered CUP wire bond implementations with a flip chip option.
To design a functional I/O power domain with these cells, an additional library is required – 1.8V Support: Power. That library contains an input-only buffer, isolated analog I/O, and a full complement of power cells along with corner and spacer cells to assemble a complete pad ring by abutment. An included rail splitter allows multiple power domains to be isolated in the same pad ring while maintaining continuous VDD/VSS for robust ESD protection.
These 22nm libraries are available in inline and staggered CUP wire bond implementations with a flip chip option.
To design a functional I/O power domain with these cells, an additional library is required – 1.8V Support: Power. That library contains an input-only buffer, isolated analog I/O, and a full complement of power cells along with corner and spacer cells to assemble a complete pad ring by abutment. An included rail splitter allows multiple power domains to be isolated in the same pad ring while maintaining continuous VDD/VSS for robust ESD protection.
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