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90nm OTP Non Volatile Memory for Standard CMOS Logic Process
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10-Bit 64MHz 1.2V 1.9mW delta-sigma ADC, CMOS 130nm
The nSAD_ST130M_1V2_AD10b64M is a 64MS/s, 9.9 ENOB, power efficient Sigma Delta ADC designed on the ST 130 M technology. Built around a fully-differential 3rd-order single-bit low-pass modulator, it consumes 1.9mW on silicon, reaching an energy efficiency of 31fJ/conversion-step.
Features
- STMicroelectronics 130nm CMOS mixed-mode process
- Single 1.2V supply
- 64 MHz modulator clock rate
- 700 mVpp_diff input dynamic range
- Modulator signal bandwidth = 1 MHz
- SNRpeak = 62.3dB @ Fin = 100kHz
- SNDRpeak = 61.3dB @ Fin = 100kHz
- SFDRpeak = 80dBc @ Fin = 100kHz
- THDpeak = -75dBc @ Fin = 100kHz
- Fully internal reference voltage generator and bias circuitry
- only 1.9mW typical at 64MHz including reference generator and biasing
- 0.15 mm2 core area including reference generator, biasing
Applications
- Very low power communications (Zigbee, Bluetooth LE)
- Very low power industrial control and instrumentation
- Battery powered systems
- Automotive and logistics equipment
Block Diagram of the 10-Bit 64MHz 1.2V 1.9mW delta-sigma ADC, CMOS 130nm
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10-Bit Delta-Sigma ADC in 130nm
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