USB 3.1 PHY (10G/5G) in Samsung (14nm, 10nm, 11nm, 8nm, 5nm)
100~450MHz DDR DLL with 80 Phase Selection, SMIC0.1.3um
The system contains a single master and expandable slave blocks. The master block optimizes power dissipation and area usage. The slave block determines arbitrary signal generation with certain desired phase delay from a reference clock according to selected fraction. The device supports DDR memory interface for SOC integration.
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DDR DLL Phase Selection IP
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