3.3V 100MHz Oscillator IO Inline Pad Set
The 22nm libraries are available in inline and staggered CUP wire bond implementations with a flip chip option.
To utilize these cells in the pad ring, an additional library is required – 3.3V Support: Power. That library contains the DVDD/DVSS power cells necessary for ESD protection, the POC and VREF cells, and a rail splitter to isolate the oscillator in its own power domain as recommended. It also contains an input-only buffer, isolated analog I/O, and a full complement of power cells along with corner and spacer cells to assemble a complete pad ring by abutment. The rail splitter allows multiple power domains to be isolated in the same pad ring while maintaining continuous VDD/VSS for robust ESD protection.
View 3.3V 100MHz Oscillator IO Inline Pad Set full description to...
- see the entire 3.3V 100MHz Oscillator IO Inline Pad Set datasheet
- get in contact with 3.3V 100MHz Oscillator IO Inline Pad Set Supplier
ESD IP
- on-chip ESD protection
- TSMC based IO & ESD solutions supporting GPIO, I2C,RGMII, SD, LVDS, HDMI & analog/RF across multiple technology nodes
- High-voltage solutions in baseline TSMC & GlobalFoundries technologies
- SMIC18 General process, Multi-Voltage IO, High ESD perfermance
- RF I/O Pad Set and Discrete RF ESD Protection Components
- RF I/O Pad Set and Discrete RF ESD Protection Components