USB 2.0 femtoPHY in TSMC (40nm, 28nm, 22nm, 16nm, 12nm, 10nm, 7nm, 6nm)
3.3V 32kHz Oscillator IO Inline Pad Set
These 22nm libraries are available in inline and staggered CUP wire bond implementations with a flip chip option.
To utilize these cells in the pad ring, an additional library is required – 3.3V Support: Power. That library contains the DVDD/DVSS power cells necessary for ESD protection, the POC and VREF cells, and a rail splitter to isolate the oscillator in its own power domain as recommended. It also contains an input-only buffer, isolated analog I/O, and a full complement of power cells along with corner and spacer cells to assemble a complete pad ring by abutment. The rail splitter allows multiple power domains to be isolated in the same pad ring while maintaining continuous VDD/VSS for robust ESD protection.
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ESD IP
- on-chip ESD protection
- TSMC based IO & ESD solutions supporting GPIO, I2C,RGMII, SD, LVDS, HDMI & analog/RF across multiple technology nodes
- High-voltage solutions in baseline TSMC & GlobalFoundries technologies
- SMIC18 General process, Multi-Voltage IO, High ESD perfermance
- RF I/O Pad Set and Discrete RF ESD Protection Components
- RF I/O Pad Set and Discrete RF ESD Protection Components