3.3V General Purpose I/O Inline Pad Set
These 22nm libraries are available in inline and staggered CUP wire bond implementations with a flip chip option.
To design a functional I/O power domain with these cells, an additional library is required – 3.3V Support: Power. That library contains an input-only buffer, isolated analog I/O, and a full complement of power cells along with corner and spacer cells to assemble a complete pad ring by abutment. An included rail splitter allows multiple power domains to be isolated in the same pad ring while maintaining continuous VDD/VSS for robust ESD protection.
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ESD IP
- ESD solution set for LV & advanced processes
- High ESD analog IO library
- TSMC based IO & ESD solutions supporting GPIO, I2C,RGMII, SD, LVDS, HDMI & analog/RF across multiple technology nodes
- High-voltage solutions in baseline TSMC & GlobalFoundries technologies
- ESD solution set for HV/BCD processes
- RF I/O Pad Set and Discrete RF ESD Protection Components