CrossBar Resistive RAM (ReRAM) High-Density Memory IP cores are an ideal choice for high-density, low-latency memory applications such as data center storage, mobile computing, consumer electronics and artificial intelligence. They offer high density, low latency, high performance and low power in a non-volatile memory solution.
CrossBar is enabling a new class of persistent memory solutions for read-intensive applications that benefit from the superior characteristics of CrossBar’s 3D ReRAM technologies.
Supported densities are from 64Gbits (8GBytes) or custom sizes, enabling 128GB NVDIMM to 1TB NV-DIMM with 8 chips per package. At system level, NV-DIMM read performance achieves 25.6 GB/s – 64 IOs – 250ns random read latency while consuming less than 1W active reads.
In addition to high-density non-volatile memory applications, CrossBar is also offering its high-density ReRAM technology for use in security applications, where the ReRAM cell is utilized for secure physical unclonable function (PUF) keys embedded in semiconductors.