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180nm OTP Non Volatile Memory for Standard CMOS Logic Process
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40nm Low Leakage VHS, Channel Length 50nm, LVT Logic Process Standard cell Library
SMIC 40nm Low Leakage VHS, channel length 50nm, LVT Logic Process Standard cell Library
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Standard Cell IP
- 12 track thick oxide standard cell library at TSMC 40 - low leakage and direct battery connection (operating voltages from 1.1 V to 3.3 V)
- 12 track thick oxide standard cell library at TSMC 40 - low leakage and direct battery connection (operating voltages from 1.1 V to 3.3 V)
- 12 track thick oxide standard cell library at TSMC 40 - low leakage and direct battery connection (operating voltages from 1.1 V to 3.3 V)
- 12 track thick oxide standard cell library at TSMC 40 - low leakage and direct battery connection (operating voltages from 1.1 V to 3.3 V)
- 7 track Ultra High Density standard cell library at TSMC 28 nm
- 7 track Ultra High Density standard cell library at TSMC 28 nm HPC+