This TSMC 28nm GPIO is designed for high-speed (>150MHz output, >250MHz input) applications. The IO operates at either 1.8V or 3.3V and can dynamically switch between these voltages during operation. The cell is power sequence independent, and is fully self-protecting during power ramp. A unique feature of the 28nm GPIO is its fail-safe capability. Though a full push-pull IO, the part can be powered down and leak low current from externally driven active signals, much in the same way as an open-drain IO.
Built into our IO libraries, and also offered as a separate service, is our strong ESD expertise. Certus was founded by ESD engineers and our results speak for themselves. Not only do we consistently exceed the standard ESD targets of 2KV HBM and 500V CDM, but we also provide on-chip solutions for standards such as IEC-61000-4-2, system-level ESD and Cable Discharge Events (CDE).
Certus supports IO libraries across multiple TSMC nodes including 180nm, 130nm, 40nm, 28nm, 22nm, and 16/12nm. Certus is particularly suited at providing custom variants in a cost-efficient framework. Please contact us for supplementary physical or electrical features that can suit your needs.