VeriSilicon GSMC 0.18um Ultra Low Leakage Process High-Speed Synchronous Memory Compiler optimized for Grace Semiconductor Manufacturing Corporation (GSMC) 0.18m Logic1P6M Ultra Low Leakage 1.8v/3.3v process can flexibly generate memory blocks via a friendly GUI or shell commands.
The compiler supports a comprehensive range of word and bit lengths. While satisfying speed and power requirements, it is optimized for area efficiency.
VeriSilicon GSMC 0.18um Ultra Low Leakage Process High-Speed Synchronous Memory Compiler uses four layers within the blocks and supports metal 4, 5, or 6 as the top metal. Dummy bit cells are synthesized with the intention to enhance reliability
- Ultra Low Leakage
- High Density
- High Speed
- Size Sensitive Self-Time Delay for Fast Access
- Automatic Power Down
- Tri-State Output(SRAM only)
- Write Mask Function(SRAM & Register File)