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I/O & Core Power Pads Along with Power-down Detector
Power Cells belongs to S GPI IO T065GP, which is Sankalp’s General Purpose IO library in 65nm TSMC G+ process. They consist Core Power, Core Ground, I/O Power, I/O Ground, I/O Power with supply detection & Analog Ground. These cells operates on 3.3 V or 2.5 V I/O supply and 1.1 V or 1.0 V Core supply. ESD & Latchup immunity, Power down detection, Wire-bond and Flip-chip compatibility are some of the salient features of these cell. Cell dimensions are 25um x 170um.
Features
- 1.0 V and 2.5 V devices overdriven to 3.3 V to save mask cost
- Supports 8-layer (602) or 9-layer (702) metallization with Circuit-Under-Pad (CUP)
- Core supply is either 1.0 V or 1.1 V (+/- 5%)
- I/O supply is either 2.5 V or 3.3 V (+/- 10%)
- Power supply detection
- Operates over temperature range of -40C to 125C
- Latchup immune upto +/- 100mA current injection
- ESD hardness of 2kV HBM and 500V CDM
- Wire-bond and Flip-chip compatible
Benefits
- Services Available with this Product
- Customization
- SOC Integration
- Application & ESD Guidance
- Signal Integrity Analysis & Guidelines
- Characterization Support
Deliverables
- Specifications
- GDSII
- LEF
- LVS netlist
- Verilog Model
- Timing Model
- Documentation
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