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High Bandwidth Memory 3 (HBM3/3E) IP optimized for Samsung SF4X
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LDO voltage regulator (output voltage 2.7 V)
The regulator stabilizes the external voltage (supply voltage) and forms an output level of the specified value. Adjustment is carried out by positive feedback through the operational amplifier. Feedback allows for voltage drop on the wire by which stabilized voltage is supplied to the cell.
The block is fabricated on SMIC CMOS 0.18 um technology.
The block is fabricated on SMIC CMOS 0.18 um technology.
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