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Low Drop Out 3mA Capless Regulator
The Low Drop Out 3mA Capless Regulator is a regulator circuit which has been designed to provide 1.17-1.24V with a load current of up to 3.3 mA, having a low area and high accuracy.
The regulator’s architecture has been designed so that is stable without such an external capacitor, yet yielding a small area while consuming low ground current allowing low-drop operation.
The Low Drop Out 3mA Capless Regulator uses 3.3V thick oxide devices from standard 65nm LPe process. The circuit can be scaled for a range of load currents and capacitances.
The regulator’s architecture has been designed so that is stable without such an external capacitor, yet yielding a small area while consuming low ground current allowing low-drop operation.
The Low Drop Out 3mA Capless Regulator uses 3.3V thick oxide devices from standard 65nm LPe process. The circuit can be scaled for a range of load currents and capacitances.
Features
- 65nm GF LPe Process with native NMOS
- 5 Metals Used
- 1.62V – 3.63V Input Voltage
- 1.17V – 1.24V Output Voltage
- 3.3mA Maximum Load Current
- Small Die Area
- Leakage Via Pass Device: 17nA
- Power Down Mode
Applications
- General Purpose Voltage Regulators
Block Diagram of the Low Drop Out 3mA Capless Regulator
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LDO
- LDO for 40nm eFuse 3.3V application(LDO + eFuse)
- LDO Capless Fast Response Series ( Vin = 1.65-1-95V; Vo = 0-75-1.0V; Io = 150 mA ) - TSMC 28nm
- LDO General purpose Ultra Fast Response Series ( Vin = 1.65-1.9V; Vo = 1.0V; Io=500mA ) - TSMC 28nm
- Capless LDO voltage regulator (TSMC 130 nm, 500 mA, excellent load transient)
- Capless LDO with Noise Quencher Technology (TSMC 130 nm, 100 mA, excellent supply rejection and fast settling)
- Capless LDO with Noise Quencher Technology (UMC 180 nm, 300 mA, excellent supply rejection and fast settling)
