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Low Leakage Analog IO Pads
ESD solutions and Analog Pads
* Low Leakage (< 1nA, down to pA range)
* All voltage domains (0.85V to 5.0V)
* Low Leakage (< 1nA, down to pA range)
* All voltage domains (0.85V to 5.0V)
Features
- Analog Pads
- Power Pads
- Ground Pads
- ESD protection cells
Benefits
- Low capacitance for high speed/high frequency
- Overvoltage tolerant
- Hot swap
- High CMRR
- Undervoltage tolerant
- High voltage cells
- Small area
- High EOS (IEC 61000-4-5)
- High System ESD (IEC 61000-4-2)
- Latch up immune (JEDEC78)
Deliverables
- .gds
- .lvs support
- datasheet
- documentation
- integration services
Applications
- Any (Wireless, communication, consumer, automotive, high speed, ...)
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analog IO
- Low capacitance analog IO
- High voltage analog IO pads
- High ESD analog IO library
- TSMC based IO & ESD solutions supporting GPIO, I2C,RGMII, SD, LVDS, HDMI & analog/RF across multiple technology nodes
- A 28nm Wirebond IO library with dynamically switchable 1.8V/ 3.3V GPIO, 5V I2C open-drain, 1.8V & 3.3V analog, OTP program cell, and HDMI & LVDS protection macros - featured across a variety of metal stack and pad configuration options
- A 16nm/12nm Flip-Chip IO library with dynamically switchable 1.8V/3.3V GPIO, 5V I2C open-drain, 5V OTP and 1.8V / 3.3V analog