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Metal programmable ROM compiler - Memory optimized for low power and high density - compiler range up to 1024 k
Metal programmable ROM compiler - TSMC 152 nm LP - Non volatile memory optimized for low power and high density - compiler range up to 1024 k
Features
- Ultra low dynamic power
- Decrease of packaging cost
- Smaller SoC area
- 45% less consuming than conventional metal or via ROM
- Decrease of fabrication costs
- Metal 1 and Via metal 1-2 programmable ROM
- Compatible with 1P4M SoC
- 20% denser than conventional metal or via ROM
- Low leakage
- No leakage in memory plane
- Minimal leakage in memory periphery
- 60% less leaky than conventional metal or via ROM
- Optimal DfY
- Vias half as numerous in comparison with a traditional metal or via ROM
- CASSIOPEIA Architecture using bigger transistors for optimized read margin and low sensitivity to mismatch
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ROM IP
- Single Port, Low Voltage, GLOBALFOUNDRIES 28SLP, HVt & Svt, ROM Memory Compiler
- Metal programmable ROM compiler - Memory optimized for low power - Dual Voltage - compiler range up to 1024 k
- Metal programmable ROM compiler - Memory optimized for low power and high density - Dual Voltage - compiler range up to 1024 k
- Metal programmable ROM compiler - Memory optimized for low power and high density - Dual Voltage - compiler range up to 1024 k
- Metal programmable ROM compiler - Memory optimized for low power - compiler range up to 256 k
- Metal programmable ROM compiler - Memory optimized for low power - compiler range up to 1024 k