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Metal programmable ROM compiler - Memory optimized for ultra high density
Metal programmable ROM compiler - TSMC 90 nm LP - Non volatile memory optimized for ultra high density
Features
- KEY FEATURES
- Key patent "two in one" for ultra-high-density for large capacities starting at 1 Mbit
- Ultra-low-leakage even in generic process:
- no leakage in memory plane
- minimal leakage in memory periphery
- Optimized for high DfY i.e. no compromise at the cost of design margins such as read margin
- Protection against piracy thanks to : patented bit cell and customized scrambling capabilities
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ROM IP
- Single Port, Low Voltage, GLOBALFOUNDRIES 28SLP, HVt & Svt, ROM Memory Compiler
- Metal programmable ROM compiler - Memory optimized for low power - Dual Voltage - compiler range up to 1024 k
- Metal programmable ROM compiler - Memory optimized for low power and high density - Dual Voltage - compiler range up to 1024 k
- Metal programmable ROM compiler - Memory optimized for low power - compiler range up to 256 k
- Metal programmable ROM compiler - Memory optimized for low power - compiler range up to 1024 k
- Via Programmable, Low Voltage, GLOBALFOUNDRIES 28SLP, ROM Memory Compiler