English
You are here:
Samsung 28nm Low Voltage Single-Port SRAM Compiler
VeriSilicon Samsung 28FDSOI Low Voltage Synchronous Single-Port SRAM compiler optimized for Samsung FDSOI 28nm process can flexibly generate memory blocks via a friendly GUI or shell commands. It uses copper metallization with 10 metal levels (6 thin + 2 medium + 2 thick) and ultra low-K dielectrics.
The compiler supports a comprehensive range of words and bits. While satisfying speed and power requirements, it has been optimized for area efficiency.
VeriSilicon Samsung 28FDSOI Low Voltage Synchronous Single-Port SRAM compiler uses thin metals up to metal5 and supports the metallization options of 6U1x_2U2x_2T8x_LB and 6U1x_2T8x_LB. Dummy bit cells are designed in with the intention to enhance reliability.
The compiler supports a comprehensive range of words and bits. While satisfying speed and power requirements, it has been optimized for area efficiency.
VeriSilicon Samsung 28FDSOI Low Voltage Synchronous Single-Port SRAM compiler uses thin metals up to metal5 and supports the metallization options of 6U1x_2U2x_2T8x_LB and 6U1x_2T8x_LB. Dummy bit cells are designed in with the intention to enhance reliability.
View Samsung 28nm Low Voltage Single-Port SRAM Compiler full description to...
- see the entire Samsung 28nm Low Voltage Single-Port SRAM Compiler datasheet
- get in contact with Samsung 28nm Low Voltage Single-Port SRAM Compiler Supplier
SRAM IP
- Complete Neural Processor for Edge AI
- Software implementation for Hardware Root of Trust Software to Create, Wrap and Manage Keys
- Dual Port SRAM compiler - Memory optimized for high density and low power - Dual Rail - compiler range up to 288 k
- Dual Port SRAM compiler - Memory optimized for high density and low power - Dual Rail - compiler range up to 288 k
- Single Port, Ultra High Speed, GF 22FDX, SRAM Memory Compiler
- 32-bit SRAM/PROM Controller