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USB 3.1 SuperSpeed+ (Gen2) Dual-Role Device Controller (USB-IF Certified)
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Single Port SRAM compiler - Memory optimized for ultra high density and high speed - compiler up to 64 k
Foundry Sponsored - Single Port SRAM compiler - TSMC 130 nm BCD - Memory optimized for ultra high density and high speed - compiler up to 64 k
Features
- Foundry sponsored memory generator
- Smart periphery design to reach the highest density
- Memory designed with SVT MOS for periphery and SVT HD PRBC from TSMC for memory core
- Flexible architecture
- To offer several performance trade-offs for any memory size
- Multiple form factors proposed by the generator for a given capacity
- Variable write mask capability
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SRAM
- Dual Port SRAM compiler - Memory optimized for high density and low power - Dual Rail - compiler range up to 288 k
- General purpose microprocessor with integrated SRAM controller and real time execution unit, optimized for low cost, low power microcontroller applications
- MCU with integrated 64-bit SRAM controller, Memory Protection Unit and real-time, low latency execution unit, optimized for low cost, low power microcontroller and embedded applications
- Dual Port SRAM compiler - Memory optimized for high density and low power - Dual Rail - compiler range up to 288 k
- Single Port, Ultra High Speed, GF 22FDX, SRAM Memory Compiler
- 32-bit SRAM/PROM Controller