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SMIC 0.13um General Process, 1.2V/2.5V Standard Cell Library
VeriSilicon SMIC 0.13um High-Density Standard Cell Library developed by VeriSilicon is optimized for Semiconductor Manufacturing International Corporation (SMIC) 0.13um Logic 1P8M Salicide 1.2/2.5V process, based on a nine track layout architecture.
The library supports most commonly used basic Boolean functions with multiple drive strengths. While satisfying the performance and power requirements, it was optimized for area efficiency.
The library supports most commonly used basic Boolean functions with multiple drive strengths. While satisfying the performance and power requirements, it was optimized for area efficiency.
Features
- VeriSilicon SMIC 0.13um High-Density Standard Cell Library uses metal 1 only within the cells and supports design with four, five, six, seven or eight layers of metal.
Deliverables
- Databook in electronic format
- Verilog models and Synopsys synthesis models
- Candence Silicon Ensenble Abstracts (LEF), Avanti! Apollo data, GDS II, LVS netlist
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Standard Cell IP
- 12 track thick oxide standard cell library at TSMC 40 - low leakage and direct battery connection (operating voltages from 1.1 V to 3.3 V)
- 12 track thick oxide standard cell library at TSMC 40 - low leakage and direct battery connection (operating voltages from 1.1 V to 3.3 V)
- 12 track thick oxide standard cell library at TSMC 40 - low leakage and direct battery connection (operating voltages from 1.1 V to 3.3 V)
- 12 track thick oxide standard cell library at TSMC 40 - low leakage and direct battery connection (operating voltages from 1.1 V to 3.3 V)
- 7 track Ultra High Density standard cell library at TSMC 28 nm
- 7 track Ultra High Density standard cell library at TSMC 28 nm HPC+