SSTL with bi-directional I/O’s, Vref, and ODT for DDR2 memory (1.8 V)

Features

• • Mode select – DDR2 or DDR3
• • Single-ended and differential signaling
• • DDR2 capability
• o Compliant with JEDEC specification JESD79-2E, DDR2-400
• o Data transfer rate – up to 400 MHz (800 MT/sec)
• • DDR3 capability
• o Compliant with JEDEC specification JESD79-3D, DDR-1333
• o Data transfer rate – up to 667 MHz (1333 MT/sec)
• • Staggered CUP wire bond implementation with flip chip option
• • Power-up sequencing independent design with Power-on Control
• • Robust ESD Protection
• o 2KV ESD Human Body Model (HBM)
• ▪ Compliant with JEDEC specification JS-001-2012 (April 2012)
• o 200 V ESD Machine Model (MM)
• ▪ Compliant with JEDEC specification JESD22-A115C (November 2010)
• o 500 V ESD Charge Device Model (CDM)
• ▪ Compliant with JESD22-C101E (December 2009)
• • Latch-up Immunity
• o Compliant with JESD78D (November 2011)
• o Tested using I-Test criteria of ±100mA at maximum ambient temperature of +125°C.

Deliverables

• a. Physical abstract in LEF format (.lef)
• b. Timing models in Synopsys Liberty formats (.lib and .db)
• c. Calibre compatible LVS netlist in CDL format (.cdl)
• d. GDSII stream (.gds)
• e. Behavioral Verilog (.v)
• f. Layout Parasitic Extraction (LPE) SPICE netlist (.spice)
• g. Databook (.pdf)
• h. Library User Guide - ESD Guidelines (.pdf)

• see the entire SSTL with bi-directional I/O’s, Vref, and ODT for DDR2 memory (1.8 V) datasheet
• get in contact with SSTL with bi-directional I/O’s, Vref, and ODT for DDR2 memory (1.8 V) Supplier