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Standard Cell Library in TSMC (12nm~180nm)
M31 provides various cell libraries including Ultra-High Density Standard Cell Library (HDSC), General Purpose Standard Cell library (GPSC), Ultra-High Speed Standard Cell library (HSSC), and Low Leakage Standard Cell library (LLSC). In addition to these base libraries, M31 also provides Engineering Change Order library (ECO) for metal programmable feature, and Power Management Kit library (PMK), Low Power Optimization Kit (LPKT) for power and speed optimization purpose. Nowadays, M31 Standard Cell Library has already applied to many field such as IoT, AI, Automotive and CPU/GPU market.
M31 are able to customize specific cell function and willing to cooperate with customer to achieve their PPA targets. Not only the Standard Cell Library solutions are available in a wide range of process nodes between 180nm~12nm, but also those IPs have been silicon-proven.
M31 are able to customize specific cell function and willing to cooperate with customer to achieve their PPA targets. Not only the Standard Cell Library solutions are available in a wide range of process nodes between 180nm~12nm, but also those IPs have been silicon-proven.
Features
- • Multi-operating voltage solution (voltage island)
- • Retention power solution (power-gating)
- • Fusion mixed-Vt solution (multi-Vt)
- • Multiple channel length swappable feasibility (leakage control)
- • Metal programmable for Engineering change feature (ECO library)
- • DFM compliant (uni-direction, dummy)
- • Super high routability (fully customized layout)
- • Multi-bit flip-flop for low power application
- • Always on block ultra-low leakage solution (Thick-Gate library)
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Standard Cell IP
- 12 track thick oxide standard cell library at TSMC 40 - low leakage and direct battery connection (operating voltages from 1.1 V to 3.3 V)
- 12 track thick oxide standard cell library at TSMC 40 - low leakage and direct battery connection (operating voltages from 1.1 V to 3.3 V)
- 12 track thick oxide standard cell library at TSMC 40 - low leakage and direct battery connection (operating voltages from 1.1 V to 3.3 V)
- 12 track thick oxide standard cell library at TSMC 40 - low leakage and direct battery connection (operating voltages from 1.1 V to 3.3 V)
- 7 track Ultra High Density standard cell library at TSMC 28 nm
- 7 track Ultra High Density standard cell library at TSMC 28 nm HPC+