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Standard digital, analog and oscillator IO
Features
- Standard digital, analog and oscillator IO
- Cell Size (Width * height) 30um * 155um with DUP stagger bonding pads
- Work voltage: 1.8V~3.3V power
- Robust whole chip multi-domain ESD solution with competitive cell size
- SMIC 0.040um Logic Salicide 1.1V/2.5V low leakage Process
- Suitable for 7, 8 and 9 layers application (single top metal)
- Suitable for 7, 8, 9 and 10 layers application (double top metal)
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IO
- ONFI 4.1 NAND Flash Controller & PHY & IO Pads on 12nm
- ONFI 4.1 NAND Flash Controller & PHY & IO Pads on 28nm
- ONFI 4.1 NAND Flash Controller & PHY & IO Pads on 16nm
- LDO Capless Fast Response Series ( Vin = 1.65-1-95V; Vo = 0-75-1.0V; Io = 150 mA ) - TSMC 28nm
- Low capacitance analog IO
- Low Leakage Analog IO Pads