English
You are here:
TSMC CLN28HPM 28nm DDR 4/3 PHY - 3200Mbps
The TCI DDR PHY is a high-performance, scalable system
using a radically new architecture that continuously and automatically adjusts each pin individually, correcting skew within byte lanes. This state-of-the-art tuning acts independently on each pin, data phase and chip select value. Read data eye and gate timing are also continuously adjusted. Automatic training is included for multi-cycle read gate timing and write leveling, write data eye timing, and internal and external (on DRAM) Vref setting.
Remarkable physical flexibility allows the PHY to adapt to each customer’s die floorplan and package constraints, yet is delivered and verified as a single unit for easy timing closure with no
assembly required.
The PHY is DFI 4.0 compliant, and when combined with the Northwest Logic DDR memory controller, a complete and fully-automatic DDR system is realized.
using a radically new architecture that continuously and automatically adjusts each pin individually, correcting skew within byte lanes. This state-of-the-art tuning acts independently on each pin, data phase and chip select value. Read data eye and gate timing are also continuously adjusted. Automatic training is included for multi-cycle read gate timing and write leveling, write data eye timing, and internal and external (on DRAM) Vref setting.
Remarkable physical flexibility allows the PHY to adapt to each customer’s die floorplan and package constraints, yet is delivered and verified as a single unit for easy timing closure with no
assembly required.
The PHY is DFI 4.0 compliant, and when combined with the Northwest Logic DDR memory controller, a complete and fully-automatic DDR system is realized.
Features
- Supports DDR4-3200, DDR3/L/U, LPDDR4/X and LPDDR3, simultaneously with one hard macro
- DFI 4.0 compliant
- Supports x4, x8 and x16 DRAMs
- Up to 144 bits wide
- Up to 4 chip selects, each with unique tuning
- Incudes PLL, with frequency multiplication from low frequency reference
- Per-pin architecture, similar to a SerDes, automatically corrects skew, increases data eye and eliminates most parallel interface problems
- Continuous adjustment of read data eye and gate timing
- Automatic Training includes:
- Multi-cycle read gate training and write leveling
- Write data eye centering
- Internal Vref adjustment
- External Vref adjustment in each DRAM
- Localized and optimized PHY-to-memory controller interface to ease timing closure
- Full speed read/write BIST with pseudo-random data, mux-scan ATPG and 1149.1 Boundary Scan
- Circuitry in each pin able to measure the data eye and jitter, and calculate flight delays
Benefits
- Automatic Deskew - Skew among pins is automatically corrected; intentional skew can reduce SSO
- Tuning - State-of-the-art tuning is the key to a high performance DDR system
- Complete PHY - Completely assembled and validated hard PHY and I/O ring means no assembly is required and performance is guaranteed
- Flexibility - Proprietary tools generate and validate a PHY fitted to the customer's die floorplan and package
- Timing Closure - Memory controller to PHY timing closure is eased by a localized interface and clock deskew circuitry
- Instrumentation - PHY resources can measure data eye and jitter per pin, speeding up board bring-up
Applications
- DDR4-3200
- DDR3-2133
- DDR3L-2133
- LPDDR3-2133
Block Diagram of the TSMC CLN28HPM 28nm DDR 4/3 PHY - 3200Mbps
View TSMC CLN28HPM 28nm DDR 4/3 PHY - 3200Mbps full description to...
- see the entire TSMC CLN28HPM 28nm DDR 4/3 PHY - 3200Mbps datasheet
- get in contact with TSMC CLN28HPM 28nm DDR 4/3 PHY - 3200Mbps Supplier