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10 IP
1
3.0
Adaptive Body Bias Subsystem enabling Process, Voltage & Temperature compensation to leverage FDSOI body-biasing capabilities
ABB-PVT.02_GF_22_FDX is an All-in-one Adaptive Body-Bias IP in GF 22FDX enabling Forward Body Biasing (FBB) for consumer and ULP IoT applications. It ...
2
2.0
Cap-less 100mA Low Noise LDO, XFAB 250nm
The LDO is capable of outputting 1.2V voltage with maximum power of 100mA and low drop out voltage of less than 200mV. The IP is fabricated in XFAB 25...
3
2.0
Power management unit
PMU is designed to supply embedded integrated circuits with stable and precise voltage and 1%-accurate clock frequency. It integrates 4 LDOs and 3 osc...
4
1.0
Adaptive Body Bias Generator
The adaptive body bias generator (ABBG) consists of a positive-BBG and a negative-BBG for FDSOI-MOS transistors. The ABBG is used for either Reverse B...
5
0.118
Power on Reset IP, Input: 1.8V, HJTC 0.18um eFlash/G2 process
Vrr=1.35V, Vfr=1.25V, 1.8V Power on Reset, HJTC 0.18um eFlash 1.8V/3.3V/5V process....
6
0.118
Power on Reset IP, Input: 1.8V, Output: 1.8432MHz, HJTC 0.18um eFlash/G2 process
Vrr=1.4V, Vfr=1.15V, 1.8V Power on Reset, HJTC 0.18um eFlash 1.8V/3.3V/5V process....
7
0.118
Power on Reset IP, Input: 1.8V, UMC 0.153um MS process
Vrr=1.2V Vfr=1.0V, input 1.8V, Core type (with Self-Test Circuit), Power On Reset, UMC 0.153um Mixed-Mode/Logic process....
8
0.118
Power on Reset IP, Input: 2.5V/3.3V, HJTC 0.18um eFlash/G2 process
Vrr=2V Vfr=1.95V, input VCCK=1.8V VCC3IO=3.3V, 3.3V Power On Reset, special request by Hisilicon, HJTC 0.18um 2P6M eFlash process....
9
0.118
Power Switch IP, 2 inputs, HJTC 0.18um eFlash/G2 process
2 Input Power Switch, HJTC 0.18um eFlash process....
10
0.0
1.12V/10uA, 20uA, 30uA, 50uA, 100uA Reference current and voltage source with temperature sensor
065TSMC_RS_03 is a reference current and voltage source (RS), used to supply analog blocks. It is based on bandgap reference voltage source, forming t...
