Feb. 04, 2026 –
Hsinchu, Taiwan – Attopsemi, a pioneering provider of innovative One-Time Programmable (OTP) IP solutions, today announced a significant technological leap: its proprietary I-fuse® technology has achieved silicon validation on the 7nm FinFET process. Following the previous success on 12nm process, this latest milestone reinforces Attopsemi’s technical agility in scaling its proprietary solutions alongside the cutting edge of semiconductors.
Unlike conventional OTP solutions, I-fuse® offers a comprehensive portfolio spanning multiple generations—from polysilicon to High-K Metal Gate (HKMG) and FinFET—without requiring additional mask layers or Boolean masking operations. This ensures seamless integration and high portability across a broad spectrum of process technologies.
The migration from 12nm to 7nm retains all the hallmark advantages of the I-fuse® architecture while proving its robust scalability. Even at the 7nm node, the solution maintains:
Attopsemi’s revolutionary I-fuse® is programmed below "thermal runaway." This allows electromigration (EM) to serve as the one and only one programming mechanism, ensuring high reliability guaranteed by fundamental physics. By utilizing metal as the fuse material, I-fuse® benefits from the inherent scalability of Moore’s Law: as metal width and height shrink, so do programming current and overall IP footprint. This scalability makes metal I-fuse® stand out among other OTP technologies.
The integration of I-fuse® into advanced FinFET nodes enables a new generation of applications where small area, high reliability, low-power programming and low current read are critical. This OTP technology is poised to significantly impact the global semiconductor community, especially for AI and chiplets that need chips on very advanced nodes and from heterogeneous process technologies on the same package.
"Being able to scale I-fuse® across FinFET nodes from 12nm to 7nm demonstrates I-fuse® can be ported directly to 2nm GAA and beyond. The fundamental I-fuse® programming mechanism for GAA is still the same, different MOS structures built by GAA are just to deliver currents." said Shine Chung, Chairman of Attopsemi.
Attopsemi continues to make significant strides in providing high-performance, cost-effective OTP technologies. Its rapid growth and technical milestones demonstrate a ready-to-deploy solution now available across an expanding range of world-class foundries.
Attopsemi Technology is a revolutionary OTP intellectual property (IP) provider located in Hsinchu, Taiwan. Since its founding in 2010, the company has dedicated itself to developing and licensing fuse-based OTP IP for all CMOS processes, including HKMG, FDSOI and FinFET technologies. Attopsemi provides the best possible OTP solutions for all merits in small size, low voltage/current programming/read, high quality, high reliability, low power, high speed, wide temperature and high data security. Attopsemi's proprietary I-fuse® OTP technologies have been proven in CMOS and other technologies from 0.6um to 7nm in numerous foundries worldwide, and have been adopted by many customers in automotive, IoT, PMIC, sensor, and other application fields. For more solutions, please visit https://www.attopsemi.com/