March 12, 2026 -
Samsung Electronics Enhances Technological Edge with Advanced 2nm Pprocess
By Kim Eun-jin, Business Korea
In the semiconductor competition, Samsung Electronics is strengthening its ‘Integrated Device Manufacturer (IDM)’ strategy that combines memory and foundry (semiconductor contract manufacturing) capabilities. Samsung Electronics, the global leader in DRAM and the second-largest foundry company, plans to simultaneously enhance its technological competitiveness by applying 2-nanometer (nm; 1nm equals one-billionth of a meter) process technology to the base die of next-generation HBM (High Bandwidth Memory). A structure encompassing memory, logic, and packaging is emerging as a key strength in the era of AI semiconductors.
According to industry sources on March 11, Samsung Electronics is reviewing the application of 2nm process technology to the base die of 7th-generation HBM4E. HBM consists of core dies, which are vertically stacked DRAM, and a base die that functions as a controller. The base die is located at the bottom of the HBM and serves to control power and signals.