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Single Port, Ultra Low Leakage, GF 22FDX, Register File Compiler
Samsung Plans 3nm Gate-All-Around FETs in 2021
Dylan McGrath, EETimes
5/23/2018 00:01 AM EDT
SANTA CLARA, Calif. — Samsung Electronics laid out plans to bring to mass production in 2021 the architectural successor to FinFETS, gate-all-around (GAA) transistors, at the 3nm node. The South Korean giant also reaffirmed plans to begin 7nm production using extreme ultraviolet (EUV) lithography in the second half of this year at its annual foundry technology forum here Tuesday (May 22).
GAA technology has been under development since the early 2000s by Samsung and other firms. GAA transistors are field-effect transistors (FET) that feature a gate on all four sides of the channel to overcome the physical scaling and performance limitations of FinFETs, including supply voltage.
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