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2743 IP
2551
0.0
64x8 Bits OTP (One-Time Programmable) IP, Ca-Sem- 0.18μm pure 3.3V MS process
The ATO00064X8CA180M333NA is organized as a 64-bit by 8 one-time programmable (OTP). This is a type of non-volatile memory fabricated in CanSemi 0.18...
2552
0.0
64x8 Bits OTP (One-Time Programmable) IP, Ne-chi- 0.15μm 3.3V Logic Processes
The ATO00064X8NX150FPS3NA is organized as a 64x8 one-time programmable (OTP). This is a type of non-volatile memory fabricated in Ne-chi- 0.15μm 3.3V ...
2553
0.0
64x8 Bits OTP (One-Time Programmable) IP, SMI- 0.18μm MSGL-GE-1.8-3.3 & MSGL-LC-3.3-3.3
The ATO00064X8SM180N333NA is organized as a 64-bit by 8 one-time programmable (OTP). This is a type of non-volatile memory fabricated in SMIC 0.18μm ...
2554
0.0
64x8 Bits OTP (One-Time Programmable) IP, TSM- 130nm BCD Plus Process
The ATO00064X8TS130BP53NA is organized as a 64-bit by 8 one-time programmable (OTP). This is a type of non-volatile memory fabricated in TSMC 0.13μm ...
2555
0.0
256x1 Bits OTP (One-Time Programmable) IP, Abli- 130 nm 130nm BCD with 5V CMOS Core Process
The ATO00256X1AB130MXX3XX00A is organized as a 256-bit by 1 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in 0.13µm s...
2556
0.0
256x1 Bits OTP (One-Time Programmable) IP, TSM- 0.18μm 1.8V/3.3V Mixed-Signal, General Purpose Process
The ATO00256X1TS180MSG3NA is organized as a 256 bit by 1 one-time programmable (OTP).This is a kind of non-volatile memory fabricated in TSM- 0.18μm 1...
2557
0.0
256x1 Bits OTP (One-Time Programmable) IP, UM- 110 nm 1.2V/3.3V L110AE Process
The AT256X1U110MAE0AC is organized as a 256-bit by 1 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in UM- 110 nm 1.2V/...
2558
0.0
256x1 Bits OTP (One-Time Programmable) IP, UM- 110 nm 1.2V/3.3V L110AE Process
The AT256X1U110MAE0AB is organized as 256 bits by 1 one-time programmable in 1-bit read and 1-bit program modes. This is a kind of non-volatile memory...
2559
0.0
256x1 Bits OTP (One-Time Programmable) IP, VI- 110 nm 1.2V/5.0V BCD Process
The AT256X1V110BCD0AA is organized as 256 bits by 1 one-time programmable in 1-bit read and 1-bit program modes. This is a kind of non-volatile memory...
2560
0.0
256x16 Bits OTP (One-Time Programmable) IP, 256x16 Bits One Time Programmable Device SMI- 110nm 1.2V/3.3V Mixed Signal Generic Process
The AT256X16Z110LL0AA is organized as 256 bits by 16 one-time programmable in 16-bit read and 1-bit program modes. This is a kind of non-volatile memo...
2561
0.0
256x16 Bits OTP (One-Time Programmable) IP, TSM- 152nm 1.8V/3.3V GP MS Process
The AT256X16T152LP0AA is organized as 256 bits by 16 one-time programmable in 16-bit read and 1-bit program modes. This is a kind of non-volatile memo...
2562
0.0
256X8 Bits OTP (One-Time Programmable) IP, SMI- 0.153μm MSGL-GE-1.8-3.3 Process
The ATO00256X1SM153MSG2NA is organized as a 256-bit by 1 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in SMIC 0.153u...
2563
0.0
256x8 Bits OTP (One-Time Programmable) IP, TSM- 0.13um 1.5V/3.3V LP Process
The AT256X8T130LP0AA is organized as a 256-bit by 8 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in TSM- 0.13um 1.5V/...
2564
0.0
256x8 Bits OTP (One-Time Programmable) IP, TSM- 40G 0.9/1.8V Process
The AT256X8T40G6AA is organized as 256 bits by 8 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in TSM- 40nm G standard...
2565
0.0
4608x12 Bits OTP (One-Time Programmable) IP, TSM- 40ULP 0.9V/2.5V Process
The ATO4608X12TS040ULP7ZA is organized as 4608 x 12 one-time programmable (OTP). This is a type of non-volatile memory fabricated in TSM- 40nm ULP sta...
2566
0.0
666 Mbps LVDS Transceiver IP
The MXL-TXRX-LVDS is a LVDS transceiver implemented in digital CMOS technology. It supports up to 666 Mbps. It is compatible with IEEE Std 1596, EIA-6...
2567
0.0
768x1 Bits OTP (One-Time Programmable) IP, UM- 110 nm 1.2V/3.3V L110AE
The AT768X1U110MAE0AA is organized as 768 bits by 1 one-time programmable in 1-bit read and 1-bit program modes. This is a kind of non-volatile memor...
2568
0.0
768x3 Bits OTP (One-Time Programmable) IP, UM- 142 nm 1.8V/3.3V CIS
The AT768X3U142CIS0AA is organized as 768-bits by 3 one-time programmable in parallel mode. This is a kind of non-volatile memory fabricated in 0.142...
2569
0.0
768x39 Bits OTP (One-Time Programmable) IP, TSM- 55ULP 0.9V–1.2V / 2.5V Process
The ATO0768X39TS055ULP4NL is organized as 768x39 one-time programmable (OTP). This is a type of non-volatile memory fabricated in TSM- 55nm LP 1.2V/2....
2570
0.0
36Kbyte EEPROM IP with configuration 32p32w288bit and oscillator
130GF_EEPROM_07 is a nonvolatile electrically erasable programmable read-only memory with volume 36Kbyte (32(bit per word) x 32(words per page) x 288(...
2571
0.0
16x16 Bits OTP (One-Time Programmable) IP, SMI- 0.18μm BCDM 1.8V/5V process
The ATO0016X16SM180BS33NA is organized as 16 bits by 16 one-time programmable (OTP) in 16-bit read and 1-bit program modes. This is a kind of non-vola...
2572
0.0
16x8 Bits OTP (One-Time Programmable) IP, TSM- CM018G 0.18μm 1.8V/3.3V Process
The ATO00016X8TS180CMG3NA is organized as 16 bits by 8 one-time programmable (OTP) in 8-bit read and 1-bit program modes. This is a kind of non-volati...
2573
0.0
16x8 Bits OTP (One-Time Programmable) IP, VI- 150nm 1.8V BCD Process
The ATO00016X8VI150BG22NA is organized as 16 bits by 8 one-time programmable in 8-bit read and 1-bit program modes. This is a kind of non-volatile m...
2574
0.0
16x8 Bits OTP (One-Time Programmable) IP, X-FA- 0.18um XH018 1.8V/3.3V process
The ATO00016X8XH18018P4DA is organized as a 16-bit by 8 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in 0.18µm XH018...
2575
0.0
PAD - HHGrace 110nm ULL
...
2576
0.0
Rail to rail LVDS receiver 1 Gbps
LVDS_RX is LVDS receiver with rail to rail input range. The interface to the core logic includes the output signal pin (OUTp) to receive data and the ...
2577
0.0
TCAM in SMIC 28HK+ upto 800Mbps
...
2578
0.0
SD 3.0 I/O Pad Set
The SD library provides the driver / receiver cell and required support cells for SD 3.0 signaling. Fault-tolerant operation. This library is offere...
2579
0.0
3DIO PHY IP for TSMC N5
Synopsys 3DIO is a specialized IO for multi-die integration. It includes multiple IP offerings for system-on-chip (SoC) designers to implement tunable...
2580
0.0
DDR combo IO in SMIC 28HKC+, supporting DDR3,4/LPDDR3,4, upto 2667Mbps
Brite DDR (Double Data Rate SDRAM) IO libraries cover wide range of DDR standards, from DDR2 to DDR4 and LPDDR2 to LPDDR4X with the data rate from 200...
2581
0.0
DDR combo IO in SMIC 28HKD 0.9/1.8V, supporting DDR3,4/LPDDR3,4, upto 2667Mbps
Brite DDR (Double Data Rate SDRAM) IO libraries cover wide range of DDR standards, from DDR2 to DDR4 and LPDDR2 to LPDDR4X with the data rate from 200...
2582
0.0
DDR combo IO in SMIC 28HKD 0.9/2.5V, supporting DDR2,3/LPDDR2,3, upto 1600Mbps for IOT application
Brite DDR (Double Data Rate SDRAM) IO libraries cover wide range of DDR standards, from DDR2 to DDR4 and LPDDR2 to LPDDR4X with the data rate from 200...
2583
0.0
DDR combo IO in SMIC 28HKD 0.9/2.5V, supporting DDR3,4/LPDDR3,4, upto 1866Mbps
Brite DDR (Double Data Rate SDRAM) IO libraries cover wide range of DDR standards, from DDR2 to DDR4 and LPDDR2 to LPDDR4X with the data rate from 200...
2584
0.0
DDR combo IO in SMIC 40NLL, supporting DDR2,3/LPDDR2,3, upto 1333Mbps
Brite DDR (Double Data Rate SDRAM) IO libraries cover wide range of DDR standards, from DDR2 to DDR4 and LPDDR2 to LPDDR4X with the data rate from 200...
2585
0.0
DDR combo IO in SMIC 40NLL, supporting DDR3,3U,3L,4/LPDDR2,3, upto 1866Mbps
Brite DDR (Double Data Rate SDRAM) IO libraries cover wide range of DDR standards, from DDR2 to DDR4 and LPDDR2 to LPDDR4X with the data rate from 200...
2586
0.0
DDR combo IO in SMIC 55NLL, supporting DDR2/3/3L /LPDDR2/3, upto 1333Mbps
Brite DDR IO libraries cover wide range of DDR standards, from DDR2 to DDR4 and LPDDR2 to LPDDR4X with the data rate from 200Mbps to 4805Mbps. Brite p...
2587
0.0
DDR4&LPDDR4 COMBO IO for memory controller PHY, 3200Mbps, TSMCN12
The DDR4&LPDDR4 COMBO IO is used to transfer the Command/Address/Clk and Data between the memory controller PHY and the DRAM device. The TX is designe...
2588
0.0
DDR4&LPDDR4 COMBO IO for memory controller PHY, 3200Mbps, TSMCN22
The DDR4&LPDDR4 COMBO IO is used to transfer the Command/Address/Clk and Data between the memory controller PHY and the DRAM device. The TX is designe...
2589
0.0
DDR4IO for memory PHY, 3200Mbps
The DDR4 IO is used to transfer the Command/Address/Clk and Data between the memory controller PHY and the DRAM device. The TX is designed to send inf...
2590
0.0
DDR5 Registering Clock Driver (RCD) (DDR5RCD01)
The DDR5RCD01 is a registering clock driver used on DDR5 RDIMMs and LRDIMMs. Its primary function is to buffer the Command/Address (CA) bus, chip sele...
2591
0.0
DDR5 Registering Clock Driver (RCD) (DDR5RCD03)
The DDR5RCD03 is a registering clock driver used on DDR5 RDIMMs and LRDIMMs. Its primary function is to buffer the Command/Address (CA) bus, chip sele...
2592
0.0
DDR5&DDR4 COMBO IO for memory controller PHY, 4800Mbps, TSMCN12
The DDR5&DDR4 COMBO IO is used to transfer the Command/Address/Clk and Data between the memory controller PHY and the DRAM device. The TX is designed ...
2593
0.0
Register File with low power retention mode and 3 speed options
Low Leakage. Mobile Semiconductor's RF1P-ULL-GF22FDX-PLUS memory compiler generates single-port Register File instances using the GLOBALFOUNDRIES 22nm...
2594
0.0
Register File with low power retention mode and 3 speed options
Low Leakage. Mobile Semiconductor's SP-ULD-GF22FDX-PLUS memory compiler generates single-port Register File instances using the GLOBALFOUNDRIES 22nm F...
2595
0.0
Register File with low power retention mode, high speed pins on 1 side
Low Leakage. Mobile Semiconductor's Bulk 22 ULL Register file memory compiler generates single-port Register File instances using the Bulk 22ULL proce...
2596
0.0
memBrain™ Tile
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2597
0.0
Memory Compiler(12nm,16nm,22nm,28nm,40nm,55nm, 90nm, 115nm, 130nm, 150nm, 180nm)
M31 memory compilers are designed with high industrial standards to which provides the memory solutions for density, power, and performance optimizati...
2598
0.0
General Purpose I/O (GPIO)(12nm,16nm,22nm, 28nm, 40nm, 55nm, 90nm, 110nm, 130nm, 150nm,152nm, 180nm)
GPIO is a general-purpose input/output unit that provides basic input/output functionalities. M31 provides silicon-proven GPIO libraries in a variety ...
2599
0.0
Metal programmable ROM compiler - Memory optimized for low power - compiler range up to 1024 k
Foundry Sponsored - Metal programmable ROM compiler - TSMC 90 nm LPeF - Non volatile memory optimized for low power - compiler range up to 1024 k...
2600
0.0
Metal programmable ROM compiler - Memory optimized for low power - compiler range up to 256 k
Metal programmable ROM compiler - TSMC 65 nm LP - Non volatile memory optimized for low power - compiler range up to 256 k...