June 15, 2026 -
LEUVEN (Belgium) — Imec, a world-leading research and innovation hub in advanced semiconductor technologies, is evolving its 300mm RF silicon interposer into a system-level platform for the heterogeneous integration of III-V chiplets on Si-CMOS. By uniquely combining high-density embedded capacitors, a scalable modeling framework for passive components, and laser-assisted bonding for III-V chiplet assembly, the platform lays the foundation for next-generation wireless (mmWave and sub-THz) systems, as well as RF-grade signal handling for ultrafast data center applications.
As wireless systems move into mmWave and sub-THz frequencies, and electronic and photonic interfaces in data centers are increasingly reaching their limits, it is becoming more difficult to deliver high-performance signal handling without driving up system integration complexity, cost, power consumption, and footprint.
A promising solution is to combine the superior gain, power, and efficiency of III-V materials – such as InP, GaAs, and GaN – with the scalability and cost efficiency of Si-CMOS technology. Chiplet-based heterogeneous integration on a high-performance RF silicon interposer makes this possible: it keeps performance-critical functions in compact III-V chiplets, while the interposer provides low-loss interconnects and hosts the remaining passive components.