Innosilicon’s LPDDR6 Memory IP Lands at Major Korean DRAM Maker, as It Unveils GDDR7, HBM4, & PCIe 6.0 Technologies Spanning 28nm to 3nm

August 6, 2026 -

nnosilicon has confirmed that a major Korean DRAM maker will be utilizing its LPDDR6 memory IP as it showcases the full range of memory & storage solutions.

Innosilicon Aims To Break The Memory Wall With a Fully-Domestic Produced DRAM/Storage IP, With Its LPDDR6 IP Landing In Korea

Earlier this year, Innosilicon announced that its LPDDR6/5X memory controller IP was delivered to the first customers. Today, at a conference in Shanghai, China, the company announced that one of the customers is a major DRAM manufacturer based in Korea.

During the event, Innosilicon unveiled its broad range of memory and storage controller IPs, which include next-generation technologies such as HBM4, GDDR7, LPDDR6, DDR5 MRDIMM, PCIe 6.0, and 224G SerDes.

These technologies are designed to address the growing memory and bandwidth requirements in the AI and HPC segments. Innosilicon relies heavily on China's domestic supply chain alongside its key partners, who have made it possible to achieve the speedy rollout of these IPs. For example, the 14.4 Gbps LPDDR6 IP is produced entirely with the domestically available toolset.

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