Full eNB-IoT Release 14 IP solution with multi-constellation GNSS support for IoT devices
2.5/3.3V Bidirectional LVTTL I/O with Programmable Drive, Schmitt Trigger & Pull-Up/Down
Features
- 1.0 V and 2.5 V devices overdriven to 3.3 V to save mask cost
- Operating frequency of 200MHz (400Mbps)
- Core supply is either 1.0 V or 1.1 V (+/- 5%)
- I/O supply is either 2.5 V (+/- 10%) or 3.3 V (+/- 10%)
- Operates over temperature range of -40C to 125C
- ESD hardness of 2kV HBM and 500V CDM
- Latchup immune upto +/- 100 mA current injection
- Wire-bond and Flip-chip compatible
- 4 mA, 8 mA, 16 mA and 20 mA programmable drive strengths
- Programmable pull-up and pull-down (10k Ohm)
- Selectable Schmitt trigger function for Rx
- Supports 8-layer (602) or 9-layer (702) metallization with Circuit-Under-Pad (CUP)
- Power supply sequence independent (PSSI)
- Compliant to JESD80 and normal range JESD8-5A in 2.5 V mode
- Compliant to JESD8C in 3.3 V mode
- Compliant to IEEE 802.3-2000 (MII) Electrical Specification
Benefits
- Low power
- Smaller Foot Print
- Higher Pad to PG ratio
- Faster Integration
- Services Available with this Product
- Customization
- SOC Integration
- Application & ESD Guidance
- Signal Integrity Analysis & Guidelines
- Characterization Support
Deliverables
- Specifications
- GDSII
- LEF
- LVS netlist
- Verilog Model
- Timing Model
- Documentation
View 2.5/3.3V Bidirectional LVTTL I/O with Programmable Drive, Schmitt Trigger & Pull-Up/Down full description to...
- see the entire 2.5/3.3V Bidirectional LVTTL I/O with Programmable Drive, Schmitt Trigger & Pull-Up/Down datasheet
- get in contact with 2.5/3.3V Bidirectional LVTTL I/O with Programmable Drive, Schmitt Trigger & Pull-Up/Down Supplier
IO
- ONFI 4.1 NAND Flash Controller & PHY & IO Pads on 12nm
- ONFI 4.1 NAND Flash Controller & PHY & IO Pads on 28nm
- ONFI 4.1 NAND Flash Controller & PHY & IO Pads on 16nm
- LDO Capless Fast Response Series ( Vin = 1.65-1-95V; Vo = 0-75-1.0V; Io = 150 mA ) - TSMC 28nm
- DC-DC Buck Ultra Fast Response High Power Series ( Vin = 1.6-1.9V; Vo = 0.725-1.325V; Io = 6A ) - TSMC 28nm
- LDO General purpose Ultra Fast Response Series ( Vin = 1.65-1.9V; Vo = 1.0V; Io=500mA ) - TSMC 28nm