Samsung to Invest $7 Billion in China Fab
Alan Patterson, EETimes
8/29/2017 11:31 AM EDT
TAIPEI — Samsung will invest $7 billion over a three-year period to ramp up a Chinese fab to expand production of NAND flash memory that’s in strong demand for smartphones and other mobile devices.
The investment is for a new fab in Xi’an that would be the second chip facility at the northern China site. On Monday (Aug. 28), Samsung approved $2.3 billion of the expected investment of $7 billion, according to reports by Reuters and Bloomberg that said the South Korea-based chipmaker was their news source.
E-mail This Article | Printer-Friendly Page |
|
Related News
- Intel Supports American Innovation with $7 Billion Investment in Next-Generation Semiconductor Factory in Arizona
- Tsinghua to Build $30 Billion Memory Fab in China
- Samsung Breaks Ground on $14 Billion Fab
- Samsung to spend $1.9 billion on logic fab, says report
- TSMC Arizona and U.S. Department of Commerce Announce up to US$6.6 Billion in Proposed CHIPS Act Direct Funding, the Company Plans Third Leading-Edge Fab in Phoenix
Breaking News
- TSMC's A16 Process Moves Goalposts in Tech-Leadership Game
- EDA toolset parade at TSMC's U.S. design symposium
- Altera in negotiation on private equity partner
- Arm China's ex-CEO sets up RISC-V company
- CAN FD Controller & LIN 2.1 Controller IP Cores, Available for Immediate Licensing with Proven Automotive Compatibility
Most Popular
- Controversial former Arm China CEO founds RISC-V chip startup
- Qualitas Semiconductor Partners with TUV Rheinland Korea to Enhance ISO 26262 Functional Safety Management System
- TSMC Celebrates 30th North America Technology Symposium with Innovations Powering AI with Silicon Leadership
- TSMC plans 1.6nm process for 2026
- M31 has successfully launched MIPI C/D PHY Combo IP on the advanced TSMC 5nm process