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6-bit, 1 GSPS High Performance AFE in 28nm CMOS

• 6-bit resolution, variable update rate up to 1 GSPS
• Fully differential current output, fully specified from -40C to 125C
• Ultra low power dissipation

14-bit, 1200 MSPS Ultra Low Power AFE in 28nm CMOS

56G PAM4 SerDes PHY

• Samsung Foundry 10 nm low-power CMOS
• Supports a maximum LR channel loss of -35dB@14 GHz (ball-toball)
• Supports a maximum -50dB@14 GHz crosstalk

DDR5/4 PHY for Samsung 7LPP

• Supports JEDEC standard DDR5 and DDR4 SDRAMs
• High-performance DDR PHY supporting data rates up to 4800 Mbps

PCIe 5.0 IP in Samsung 7nm

• Physical Coding Sublayer (PCS) block with PIPE interface
• Supports PCIe 5.0, 4.0, 3.1, 2.1, 1.1 encoding, backchannel initialization

6-bit, 500 MSPS High Performance ADC in 28nm CMOS

6-bit, 1 GSPS High Performance ADC in 28nm CMOS

• 6-bit resolution, variable update rate up to 1 GSPS
• Fully differential current output, fully specified from -40C to 125C
• Ultra low power dissipation

6-bit, 1 GSPS High Performance DAC in 28nm CMOS

DDR5/4 PHY IP for Samsung 10LPP

• Supports JEDEC standard DDR5 and DDR4 SDRAMs
• High-performance DDR PHY supporting data rates up to 4800 Mbps

DDR4/3 PHY IP in Samsung 8LPP

• Low latency, small area, low power
• Compatible with JEDEC standard DDR4 SDRAMs up to 3200 Mbps
• Compatible with JEDEC standard DDR3 or DDR3L SDRAMs up to 2133 Mbps

12-bit 1MS/s Single-Channel SAR ADC including Comparator- Samsung 28nm FDSOI

• Samsung 28nm FDSOI Process
• 1.8V Analog and 1.0V Digital Supplies
• 12-bit SAR ADC

12-bit 44MS/s ADC

• Samsung 28nm FDS Process
• 1.0V & 1.8V Supplies
• 12-bit SAR ADC