ProMOS pulls in 90nm mass production schedule, fueling 2H’05 operating performance
Dr. Ben Tseng, VP of Sales & Marketing Group and corporate spokesman, noted that the first pilot product of 512Mb DDR DRAM by 90nm stack process technology at ProMOS 300mm Fab 3 was successfully released with impressed production yield at 60% on July 8, 2005. Full-line pilot run of the 90nm was implemented following the first batch release and the full line production yield reached at 80%. The remarkable achievement was only possible through the relentless efforts by every one associated with Fab 3. It is projected that 10 K 300mm wafer out by 90nm in Q4 due to the pull-in 90nm mass production schedule.
Dr. Ben Tseng further stated that projected wafer starts of 7K/month in Q405 at PrOMOS 300mm Fab 3. Wafer starts of 15 k/month and 30k/month are to be executed by Q106 and Q406, respectively. By 2007, the maximum capacity at ProMOS Fab 3 will reach 40 k/month - 45 k/month.
About ProMOS
ProMOS Technologies, Hsin-chu, Taiwan, is a full-blown memory solution provider and is renowned in the global DRAM industry for its outstanding performance in manufacturing excellence and technology advancement. The company manufactures high-performance and high-density commodity DRAM memory chips as well as pseudo-SRAM, lower power SDRAM and MCM products. ProMOS is listed on Taiwan GreTai Securities Market. For more information, please visit www.promos.com.tw.
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