MoSys and Open-Silicon Pound Tharas Systems Design Into Production; Tharas Systems Hammer(R) Verification Appliances Powered by Large Number of High-Speed 1T-SRAM Memory
SUNNYVALE, Calif.--Dec. 20, 2005--MoSys, Inc. (Nasdaq:MOSY), the industry's leading provider of high-density system-on-chip (SoC) embedded memory solutions, and Open-Silicon, Inc., a fabless ASIC company that provides a predictable, reliable and cost-effective alternative to traditional chip design and supply-chain models announced today the silicon validation of MoSys' 1T-SRAM(R) high-density, high-performance embedded memory technology within Tharas Systems' Hammer S-Class and M-Class family of verification appliances. The custom multi-core device is now in volume production on TSMC's 0.13-micron silicon process using 1T-SRAM(R) technology for its embedded memory.
"To satisfy market needs we required high integration of simultaneously switching memory," says Subbu Ganesan, director, co-founder and CTO of Tharas Systems. "The trade-off analysis and high integration from Open-Silicon's IP team combined with the strong engineering support that MoSys provided allowed us to maximize the price/performance of our hardware-assisted verification solutions and delivered first-time working silicon on schedule."
"Complex designs like Tharas Systems' multi-core custom processor are becoming more common, and our customers are requiring higher densities of embedded memory," expressed Rajesh Shah, director of engineering and IP at Open-Silicon. "MoSys 1T-SRAM highly reliable embedded memory products are a valuable component in Open-Silicon's portfolio of silicon proven IP.
"Tharas Systems is a leader in plug-and-play simulation acceleration solutions and we are thrilled that they have effectively moved into production with our embedded memory technology," mentioned Chet Silvestri, CEO of MoSys. "The success of this joint program with Open-Silicon demonstrates how teamwork plays an important role our company's long term winning relationship."
About Mosys, Inc.
Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making them ideal for embedding large memories in System on Chip (SoC) designs. MoSys' licensees have shipped more than 98 million chips incorporating 1T-SRAM embedded memory technologies, demonstrating excellent manufacturability in a wide range of silicon processes and applications. MoSys is headquartered at 755 N. Mathilda Avenue, Sunnyvale, California 94085. More information is available on MoSys' website at http://www.mosys.com.
About Open-Silicon, Inc.
Open-Silicon, Inc. is a fabless ASIC company delivering the most cost-effective, predictable and reliable custom ASIC solution to electronics product customers worldwide. Open-Silicon's OpenMODEL is the semiconductor industry's first end-to-end custom ASIC solution based on a revolutionary business model that provides a seamless, low-cost, low risk alternative to traditional models for complex ASIC design and development. For more information, visit Open-Silicon's website at http://www.open-silicon.com or call 408-523-1200.
|
Related News
- MoSys' 1T-SRAM Memory Silicon-Verified on DongbuAnam's 0.18-Micron Standard Logic Process; 0.13-Micron Verifications Initiated
- MoSys Licenses 1T-SRAM-R Embedded Memory to Open-Silicon
- Lantronix Chips Using MoSys' 1T-SRAM Memory in Production; Company Chooses High-Performance Embedded Memory Solution for Use In Network Connectivity Chips
- MoSys and BiTMICRO Networks Sign Agreement for High-Performance 1T-SRAM(R) Memory Macro Geared for Family of Portable E-Disk Storage Solutions
- MoSys' 1T-SRAM(R) Embedded Memory Technology Enables Nintendo's Next Leap in Video Games
Breaking News
- Thalia's AMALIA 24.2 introduces pioneering estimated parasitics feature to reduce PEX iterations by at least 30%
- TSMC plans 1.6nm process for 2026
- Qualitas Semiconductor Partners with TUV Rheinland Korea to Enhance ISO 26262 Functional Safety Management System
- M31 has successfully launched MIPI C/D PHY Combo IP on the advanced TSMC 5nm process
- Ceva multi-protocol wireless IP could simplify IoT MCU and SoC development
Most Popular
- Controversial former Arm China CEO founds RISC-V chip startup
- Siemens collaborates with TSMC on design tool certifications for the foundry's newest processes and other enablement milestones
- Credo at TSMC 2024 North America Technology Symposium
- Synopsys Accelerates Next-Level Chip Innovation on TSMC Advanced Processes
- Kalray Joins Arm Total Design, Extending Collaboration with Arm on Accelerated AI Processing
E-mail This Article | Printer-Friendly Page |